A novel crystal defect in epitaxial wurtzite gallium nitride film

S. Q. Wang; C. P. Liu

doi:10.1016/S0167-577X(98)00159-1

A novel crystal defect in epitaxial wurtzite gallium nitride film

S. Q. Wang
, C. P. Liu

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

A novel structure defect in epitaxial wurtzite GaN film is reported in this paper. It is observed as an isolated (112̄0) planar defect within one large perfect crystal area by high-resolution electron microscopy. By careful analysis of the experimental atomic image it is found that the atomic structure is composed of Ga-Ga and N-N like-atom bonds. It forms a segment of a high-energy boundary by theoretical considerations. The reason for the defect formation is explained from the mechanism of epitaxial film growth. The defect is considered an incipient (112̄0) edge dislocation.

Original language	English
Pages (from-to)	202-207
Number of pages	6
Journal	Materials Letters
Volume	38
Issue number	3
DOIs	https://doi.org/10.1016/S0167-577X(98)00159-1
Publication status	Published - 1999 Feb

All Science Journal Classification (ASJC) codes

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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10.1016/S0167-577X(98)00159-1

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title = "A novel crystal defect in epitaxial wurtzite gallium nitride film",

abstract = "A novel structure defect in epitaxial wurtzite GaN film is reported in this paper. It is observed as an isolated (11{\=2}0) planar defect within one large perfect crystal area by high-resolution electron microscopy. By careful analysis of the experimental atomic image it is found that the atomic structure is composed of Ga-Ga and N-N like-atom bonds. It forms a segment of a high-energy boundary by theoretical considerations. The reason for the defect formation is explained from the mechanism of epitaxial film growth. The defect is considered an incipient (11{\=2}0) edge dislocation.",

author = "Wang, \{S. Q.\} and Liu, \{C. P.\}",

note = "Funding Information: The authors are grateful to Dr. P.D. Brown for his help in HREM experiment, Prof. C.J. Humphreys and Dr. C.B. Boothroyd for useful discussion. One of the authors (S.Q.W.) would like to thank the Royal Society for financial support under the Royal Fellowship Programme. This work was also partially supported by the Pandeng Research Project of China.",

year = "1999",

month = feb,

doi = "10.1016/S0167-577X(98)00159-1",

language = "English",

volume = "38",

pages = "202--207",

journal = "Materials Letters",

issn = "0167-577X",

publisher = "Elsevier BV",

number = "3",

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TY - JOUR

T1 - A novel crystal defect in epitaxial wurtzite gallium nitride film

AU - Wang, S. Q.

AU - Liu, C. P.

N1 - Funding Information: The authors are grateful to Dr. P.D. Brown for his help in HREM experiment, Prof. C.J. Humphreys and Dr. C.B. Boothroyd for useful discussion. One of the authors (S.Q.W.) would like to thank the Royal Society for financial support under the Royal Fellowship Programme. This work was also partially supported by the Pandeng Research Project of China.

PY - 1999/2

Y1 - 1999/2

N2 - A novel structure defect in epitaxial wurtzite GaN film is reported in this paper. It is observed as an isolated (112̄0) planar defect within one large perfect crystal area by high-resolution electron microscopy. By careful analysis of the experimental atomic image it is found that the atomic structure is composed of Ga-Ga and N-N like-atom bonds. It forms a segment of a high-energy boundary by theoretical considerations. The reason for the defect formation is explained from the mechanism of epitaxial film growth. The defect is considered an incipient (112̄0) edge dislocation.

AB - A novel structure defect in epitaxial wurtzite GaN film is reported in this paper. It is observed as an isolated (112̄0) planar defect within one large perfect crystal area by high-resolution electron microscopy. By careful analysis of the experimental atomic image it is found that the atomic structure is composed of Ga-Ga and N-N like-atom bonds. It forms a segment of a high-energy boundary by theoretical considerations. The reason for the defect formation is explained from the mechanism of epitaxial film growth. The defect is considered an incipient (112̄0) edge dislocation.

UR - https://www.scopus.com/pages/publications/0033078085

UR - https://www.scopus.com/pages/publications/0033078085#tab=citedBy

U2 - 10.1016/S0167-577X(98)00159-1

DO - 10.1016/S0167-577X(98)00159-1

M3 - Article

AN - SCOPUS:0033078085

SN - 0167-577X

VL - 38

SP - 202

EP - 207

JO - Materials Letters

JF - Materials Letters

IS - 3

ER -

A novel crystal defect in epitaxial wurtzite gallium nitride film

Abstract

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