A novel design of piezo-resistive type underwater acoustic sensor using SOI wafer

Sie Yu Li, Chih Chao Hsu, Shi Zheng Lin, Ru-Min Chao

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

This paper reports a novel design of a MEMS type underwater acoustic sensor using SOI (Silicon in Insulator) wafer as the starting material. The structure layer of the SOI wafer provides a uniform membrane thickness which is perfect for sensing structure. By chemical vapor deposition thin layers of silicon nitride and poly-silicon, the sensing membrane and piezo-resistive material are patterned and etched using lithography and dry etching processes, respectively. After the gold wire is patterned, the entire back side of the sensing membrane is etched in order to create the cavity. The waterproof of the hydrophone is completed by deposition a thin layer of Parylene polymer material. Another fabrication technique starting from a 6'' single-crystalline silicon wafer by controlled etching method will also present. The sensitivity comparison between the MEMS type acoustic hydrophone and the piezoelectric one is made, and some conclusions are drawn. We have proven that the controlled etching process can create the sensing membrane without difficulties. Currently, the research project is still undergoing, part of the results will be shown at the conference.

Original languageEnglish
Title of host publication2007 16th IEEE International Symposium on the Applications of Ferroelectrics, ISAF
DOIs
Publication statusPublished - 2007 Dec 1
EventOCEANS 2006 - Asia Pacific - , Singapore
Duration: 2007 May 162007 May 19

Publication series

NameOCEANS 2006 - Asia Pacific

Other

OtherOCEANS 2006 - Asia Pacific
CountrySingapore
Period07-05-1607-05-19

Fingerprint

Silicon sensors
Underwater acoustics
Membranes
Hydrophones
MEMS
Etching
Silicon
Dry etching
Silicon nitride
Silicon wafers
Lithography
Chemical vapor deposition
Gold
Acoustics
Wire
Crystalline materials
Fabrication
Polymers

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Ocean Engineering

Cite this

Li, S. Y., Hsu, C. C., Lin, S. Z., & Chao, R-M. (2007). A novel design of piezo-resistive type underwater acoustic sensor using SOI wafer. In 2007 16th IEEE International Symposium on the Applications of Ferroelectrics, ISAF [4393840] (OCEANS 2006 - Asia Pacific). https://doi.org/10.1109/OCEANSAP.2006.4393840
Li, Sie Yu ; Hsu, Chih Chao ; Lin, Shi Zheng ; Chao, Ru-Min. / A novel design of piezo-resistive type underwater acoustic sensor using SOI wafer. 2007 16th IEEE International Symposium on the Applications of Ferroelectrics, ISAF. 2007. (OCEANS 2006 - Asia Pacific).
@inproceedings{5c22b1caebe14b8691a538b1f92d2fba,
title = "A novel design of piezo-resistive type underwater acoustic sensor using SOI wafer",
abstract = "This paper reports a novel design of a MEMS type underwater acoustic sensor using SOI (Silicon in Insulator) wafer as the starting material. The structure layer of the SOI wafer provides a uniform membrane thickness which is perfect for sensing structure. By chemical vapor deposition thin layers of silicon nitride and poly-silicon, the sensing membrane and piezo-resistive material are patterned and etched using lithography and dry etching processes, respectively. After the gold wire is patterned, the entire back side of the sensing membrane is etched in order to create the cavity. The waterproof of the hydrophone is completed by deposition a thin layer of Parylene polymer material. Another fabrication technique starting from a 6'' single-crystalline silicon wafer by controlled etching method will also present. The sensitivity comparison between the MEMS type acoustic hydrophone and the piezoelectric one is made, and some conclusions are drawn. We have proven that the controlled etching process can create the sensing membrane without difficulties. Currently, the research project is still undergoing, part of the results will be shown at the conference.",
author = "Li, {Sie Yu} and Hsu, {Chih Chao} and Lin, {Shi Zheng} and Ru-Min Chao",
year = "2007",
month = "12",
day = "1",
doi = "10.1109/OCEANSAP.2006.4393840",
language = "English",
isbn = "1424401380",
series = "OCEANS 2006 - Asia Pacific",
booktitle = "2007 16th IEEE International Symposium on the Applications of Ferroelectrics, ISAF",

}

Li, SY, Hsu, CC, Lin, SZ & Chao, R-M 2007, A novel design of piezo-resistive type underwater acoustic sensor using SOI wafer. in 2007 16th IEEE International Symposium on the Applications of Ferroelectrics, ISAF., 4393840, OCEANS 2006 - Asia Pacific, OCEANS 2006 - Asia Pacific, Singapore, 07-05-16. https://doi.org/10.1109/OCEANSAP.2006.4393840

A novel design of piezo-resistive type underwater acoustic sensor using SOI wafer. / Li, Sie Yu; Hsu, Chih Chao; Lin, Shi Zheng; Chao, Ru-Min.

2007 16th IEEE International Symposium on the Applications of Ferroelectrics, ISAF. 2007. 4393840 (OCEANS 2006 - Asia Pacific).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

TY - GEN

T1 - A novel design of piezo-resistive type underwater acoustic sensor using SOI wafer

AU - Li, Sie Yu

AU - Hsu, Chih Chao

AU - Lin, Shi Zheng

AU - Chao, Ru-Min

PY - 2007/12/1

Y1 - 2007/12/1

N2 - This paper reports a novel design of a MEMS type underwater acoustic sensor using SOI (Silicon in Insulator) wafer as the starting material. The structure layer of the SOI wafer provides a uniform membrane thickness which is perfect for sensing structure. By chemical vapor deposition thin layers of silicon nitride and poly-silicon, the sensing membrane and piezo-resistive material are patterned and etched using lithography and dry etching processes, respectively. After the gold wire is patterned, the entire back side of the sensing membrane is etched in order to create the cavity. The waterproof of the hydrophone is completed by deposition a thin layer of Parylene polymer material. Another fabrication technique starting from a 6'' single-crystalline silicon wafer by controlled etching method will also present. The sensitivity comparison between the MEMS type acoustic hydrophone and the piezoelectric one is made, and some conclusions are drawn. We have proven that the controlled etching process can create the sensing membrane without difficulties. Currently, the research project is still undergoing, part of the results will be shown at the conference.

AB - This paper reports a novel design of a MEMS type underwater acoustic sensor using SOI (Silicon in Insulator) wafer as the starting material. The structure layer of the SOI wafer provides a uniform membrane thickness which is perfect for sensing structure. By chemical vapor deposition thin layers of silicon nitride and poly-silicon, the sensing membrane and piezo-resistive material are patterned and etched using lithography and dry etching processes, respectively. After the gold wire is patterned, the entire back side of the sensing membrane is etched in order to create the cavity. The waterproof of the hydrophone is completed by deposition a thin layer of Parylene polymer material. Another fabrication technique starting from a 6'' single-crystalline silicon wafer by controlled etching method will also present. The sensitivity comparison between the MEMS type acoustic hydrophone and the piezoelectric one is made, and some conclusions are drawn. We have proven that the controlled etching process can create the sensing membrane without difficulties. Currently, the research project is still undergoing, part of the results will be shown at the conference.

UR - http://www.scopus.com/inward/record.url?scp=50249152288&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=50249152288&partnerID=8YFLogxK

U2 - 10.1109/OCEANSAP.2006.4393840

DO - 10.1109/OCEANSAP.2006.4393840

M3 - Conference contribution

SN - 1424401380

SN - 9781424401383

T3 - OCEANS 2006 - Asia Pacific

BT - 2007 16th IEEE International Symposium on the Applications of Ferroelectrics, ISAF

ER -

Li SY, Hsu CC, Lin SZ, Chao R-M. A novel design of piezo-resistive type underwater acoustic sensor using SOI wafer. In 2007 16th IEEE International Symposium on the Applications of Ferroelectrics, ISAF. 2007. 4393840. (OCEANS 2006 - Asia Pacific). https://doi.org/10.1109/OCEANSAP.2006.4393840