TY - JOUR
T1 - A novel diac-like switch using double triangular barriers
AU - Yarn, Kao Feng
AU - Wang, Yeong Her
AU - Chang, Chun Yen
N1 - Funding Information:
AcknaH’l~a’gemenrs~The authors would like to thank H. C. Wei for his kind assistance. This work was partly supported by the National Science Council of the Republic of China under Contract No. NSC-81-0417-E006-03 and NSC-RI-0404-E006-612.
PY - 1994/11
Y1 - 1994/11
N2 - In this study, a new diac-like switch using GaAs double triangular barrier structures (DTBS) prepared by molecular beam epitaxy (MBE) has been fabricated and demonstrated. Unique bidirectional current-voltage (I-V) characteristics between 300 and 77 K were realized for the first time. Large on/off voltage differences and control efficiency were observed in both directions. Based on I-V measurements, the operation mechanism of the diac-like switch was analyzed and is discussed in detail using an equivalent circuit approach. A temperature-dependent effect on the switching voltage, VS, and holding voltage, VH, was also investigated.
AB - In this study, a new diac-like switch using GaAs double triangular barrier structures (DTBS) prepared by molecular beam epitaxy (MBE) has been fabricated and demonstrated. Unique bidirectional current-voltage (I-V) characteristics between 300 and 77 K were realized for the first time. Large on/off voltage differences and control efficiency were observed in both directions. Based on I-V measurements, the operation mechanism of the diac-like switch was analyzed and is discussed in detail using an equivalent circuit approach. A temperature-dependent effect on the switching voltage, VS, and holding voltage, VH, was also investigated.
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U2 - 10.1016/0038-1101(94)90176-7
DO - 10.1016/0038-1101(94)90176-7
M3 - Article
AN - SCOPUS:0028533011
VL - 37
SP - 1849
EP - 1852
JO - Solid-State Electronics
JF - Solid-State Electronics
SN - 0038-1101
IS - 11
ER -