A novel diac-like switch using double triangular barriers

Kao Feng Yarn, Yeong-Her Wang, Chun Yen Chang

Research output: Contribution to journalArticle

Abstract

In this study, a new diac-like switch using GaAs double triangular barrier structures (DTBS) prepared by molecular beam epitaxy (MBE) has been fabricated and demonstrated. Unique bidirectional current-voltage (I-V) characteristics between 300 and 77 K were realized for the first time. Large on/off voltage differences and control efficiency were observed in both directions. Based on I-V measurements, the operation mechanism of the diac-like switch was analyzed and is discussed in detail using an equivalent circuit approach. A temperature-dependent effect on the switching voltage, VS, and holding voltage, VH, was also investigated.

Original languageEnglish
Pages (from-to)1849-1852
Number of pages4
JournalSolid State Electronics
Volume37
Issue number11
DOIs
Publication statusPublished - 1994 Jan 1

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switches
Switches
Electric potential
electric potential
equivalent circuits
Molecular beam epitaxy
Equivalent circuits
molecular beam epitaxy
Temperature
temperature

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Yarn, Kao Feng ; Wang, Yeong-Her ; Chang, Chun Yen. / A novel diac-like switch using double triangular barriers. In: Solid State Electronics. 1994 ; Vol. 37, No. 11. pp. 1849-1852.
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A novel diac-like switch using double triangular barriers. / Yarn, Kao Feng; Wang, Yeong-Her; Chang, Chun Yen.

In: Solid State Electronics, Vol. 37, No. 11, 01.01.1994, p. 1849-1852.

Research output: Contribution to journalArticle

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