Abstract
In this study, a new diac-like switch using GaAs double triangular barrier structures (DTBS) prepared by molecular beam epitaxy (MBE) has been fabricated and demonstrated. Unique bidirectional current-voltage (I-V) characteristics between 300 and 77 K were realized for the first time. Large on/off voltage differences and control efficiency were observed in both directions. Based on I-V measurements, the operation mechanism of the diac-like switch was analyzed and is discussed in detail using an equivalent circuit approach. A temperature-dependent effect on the switching voltage, VS, and holding voltage, VH, was also investigated.
| Original language | English |
|---|---|
| Pages (from-to) | 1849-1852 |
| Number of pages | 4 |
| Journal | Solid State Electronics |
| Volume | 37 |
| Issue number | 11 |
| DOIs | |
| Publication status | Published - 1994 Jan 1 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry
Cite this
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A novel diac-like switch using double triangular barriers. / Yarn, Kao Feng; Wang, Yeong-Her; Chang, Chun Yen.
In: Solid State Electronics, Vol. 37, No. 11, 01.01.1994, p. 1849-1852.Research output: Contribution to journal › Article
TY - JOUR
T1 - A novel diac-like switch using double triangular barriers
AU - Yarn, Kao Feng
AU - Wang, Yeong-Her
AU - Chang, Chun Yen
PY - 1994/1/1
Y1 - 1994/1/1
N2 - In this study, a new diac-like switch using GaAs double triangular barrier structures (DTBS) prepared by molecular beam epitaxy (MBE) has been fabricated and demonstrated. Unique bidirectional current-voltage (I-V) characteristics between 300 and 77 K were realized for the first time. Large on/off voltage differences and control efficiency were observed in both directions. Based on I-V measurements, the operation mechanism of the diac-like switch was analyzed and is discussed in detail using an equivalent circuit approach. A temperature-dependent effect on the switching voltage, VS, and holding voltage, VH, was also investigated.
AB - In this study, a new diac-like switch using GaAs double triangular barrier structures (DTBS) prepared by molecular beam epitaxy (MBE) has been fabricated and demonstrated. Unique bidirectional current-voltage (I-V) characteristics between 300 and 77 K were realized for the first time. Large on/off voltage differences and control efficiency were observed in both directions. Based on I-V measurements, the operation mechanism of the diac-like switch was analyzed and is discussed in detail using an equivalent circuit approach. A temperature-dependent effect on the switching voltage, VS, and holding voltage, VH, was also investigated.
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UR - http://www.scopus.com/inward/citedby.url?scp=0028533011&partnerID=8YFLogxK
U2 - 10.1016/0038-1101(94)90176-7
DO - 10.1016/0038-1101(94)90176-7
M3 - Article
VL - 37
SP - 1849
EP - 1852
JO - Solid-State Electronics
JF - Solid-State Electronics
SN - 0038-1101
IS - 11
ER -