A novel diac-like switch using double triangular barriers

Kao Feng Yarn, Yeong Her Wang, Chun Yen Chang

Research output: Contribution to journalArticlepeer-review


In this study, a new diac-like switch using GaAs double triangular barrier structures (DTBS) prepared by molecular beam epitaxy (MBE) has been fabricated and demonstrated. Unique bidirectional current-voltage (I-V) characteristics between 300 and 77 K were realized for the first time. Large on/off voltage differences and control efficiency were observed in both directions. Based on I-V measurements, the operation mechanism of the diac-like switch was analyzed and is discussed in detail using an equivalent circuit approach. A temperature-dependent effect on the switching voltage, VS, and holding voltage, VH, was also investigated.

Original languageEnglish
Pages (from-to)1849-1852
Number of pages4
JournalSolid State Electronics
Issue number11
Publication statusPublished - 1994 Nov

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Materials Chemistry
  • Electrical and Electronic Engineering


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