Abstract
In this study, a new diac-like switch using GaAs double triangular barrier structures (DTBS) prepared by molecular beam epitaxy (MBE) has been fabricated and demonstrated. Unique bidirectional current-voltage (I-V) characteristics between 300 and 77 K were realized for the first time. Large on/off voltage differences and control efficiency were observed in both directions. Based on I-V measurements, the operation mechanism of the diac-like switch was analyzed and is discussed in detail using an equivalent circuit approach. A temperature-dependent effect on the switching voltage, VS, and holding voltage, VH, was also investigated.
| Original language | English |
|---|---|
| Pages (from-to) | 1849-1852 |
| Number of pages | 4 |
| Journal | Solid State Electronics |
| Volume | 37 |
| Issue number | 11 |
| DOIs | |
| Publication status | Published - 1994 Jan 1 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry
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Yarn, K. F., Wang, Y-H., & Chang, C. Y. (1994). A novel diac-like switch using double triangular barriers. Solid State Electronics, 37(11), 1849-1852. https://doi.org/10.1016/0038-1101(94)90176-7