TY - JOUR
T1 - A novel dilute antimony channel In0.2Ga0.8AsSb/ GaAs HEMT
AU - Su, Ke Hua
AU - Hsu, Wei Chou
AU - Lee, Ching Sung
AU - Wu, Tsung Yeh
AU - Wu, Yue Han
AU - Chang, Li
AU - Hsiao, Ru Shang
AU - Chen, Jen Fang
AU - Chi, Wei Chi
N1 - Funding Information:
Manuscript received October 4, 2006; revised November 17, 2006. This work was supported by the National Science Council, Taiwan, R.O.C. under Contract NSC 94-2215-E-006-005. The review of this letter was arranged by Editor J. del Alamo. K.-H. Su, W.-C. Hsu, and T.-Y. Wu are with the Advanced Optoelectronic Technology Center and the Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University, Tainan 70101, Taiwan, R.O.C. (e-mail: [email protected]). C.-S. Lee is with the Department of Electronic Engineering, Feng Chia University, Taichung 40724, Taiwan, R.O.C. Y.-H. Wu and L. Chang are with the Department of Materials and Engineering, National Chiao Tung University, Hsinchu 300, Taiwan, R.O.C. R.-S. Hsiao and J.-F. Chen are with the Department of Electrophysics, National Chiao Tung University, Hsinchu 300, Taiwan, R.O.C. T.-W. Chi is with the Industrial Technology Research Institute, Hsinchu 310, Taiwan, R.O.C. Digital Object Identifier 10.1109/LED.2006.889047
PY - 2007/2
Y1 - 2007/2
N2 - This letter reports, for the first time, a high-electron mobility transistor (HEMT) using a dilute antimony In0.2 Ga0.8AsSb channel, which is grown by a molecular-beam epitaxy system. The interfacial quality within the InGaAsSb/GaAs quantum well of the HEMT device was effectively improved by introducing the surfactantlike Sb atoms during the growth of the InGaAs layer. The improved heterostructural quality and electron transport properties have also been verified by various surface characterization techniques. In comparison, the proposed HEMT with (without) the incorporation of Sb atoms has demonstrated the maximum extrinsic transconductance gm,max of 227 (180) mS/mm, a drain saturation current density IDSS of 218 (170) mA/mm, a gate-voltage swing of 1.215 (1.15) V, a cutoff frequency fT of 25 (20.6) GHz, and the maximum oscillation frequency fmax of 28.3 (25.6) GHz at 300 K with gate dimensions of 1.2 × 200 μm2.
AB - This letter reports, for the first time, a high-electron mobility transistor (HEMT) using a dilute antimony In0.2 Ga0.8AsSb channel, which is grown by a molecular-beam epitaxy system. The interfacial quality within the InGaAsSb/GaAs quantum well of the HEMT device was effectively improved by introducing the surfactantlike Sb atoms during the growth of the InGaAs layer. The improved heterostructural quality and electron transport properties have also been verified by various surface characterization techniques. In comparison, the proposed HEMT with (without) the incorporation of Sb atoms has demonstrated the maximum extrinsic transconductance gm,max of 227 (180) mS/mm, a drain saturation current density IDSS of 218 (170) mA/mm, a gate-voltage swing of 1.215 (1.15) V, a cutoff frequency fT of 25 (20.6) GHz, and the maximum oscillation frequency fmax of 28.3 (25.6) GHz at 300 K with gate dimensions of 1.2 × 200 μm2.
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U2 - 10.1109/LED.2006.889047
DO - 10.1109/LED.2006.889047
M3 - Article
AN - SCOPUS:33847395299
SN - 0741-3106
VL - 28
SP - 96
EP - 99
JO - IEEE Electron Device Letters
JF - IEEE Electron Device Letters
IS - 2
ER -