A novel double ion-implant (DII) Ti-salicide technology combined by As pre-amorphization implant (PAI) plus Si ion-mixing implant without the additional lithography process has been developed successfully and reported. Based on this technology, the good performances of uniform Ti-silicide formation, low and narrow distribution of sheet resistances both on n+/p+ poly-gate and source/drain (S/D) diffusion layers, and lower leakage currents in the n+/p-well and p+/n-well junctions are obtained simultaneously. In addition, excellent behavior of a 0.24-μm NMOSFET and PMOSFET fabricated by this technology are also achieved.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering