A novel double ion-implant (DII) Ti-salicide technology for high-performance sub-0.25-μm CMOS devices applications

Kong Beng Thei, Wen Chau Liu, Hung Ming Chuang, Kun Wei Lin, Chin Chuan Cheng, Chin Hsiung Ho, Chi Wen Su, Shou Gwo Wuu, Chung Shu Wang

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)

Abstract

A novel double ion-implant (DII) Ti-salicide technology combined by As pre-amorphization implant (PAI) plus Si ion-mixing implant without the additional lithography process has been developed successfully and reported. Based on this technology, the good performances of uniform Ti-silicide formation, low and narrow distribution of sheet resistances both on n+/p+ poly-gate and source/drain (S/D) diffusion layers, and lower leakage currents in the n+/p-well and p+/n-well junctions are obtained simultaneously. In addition, excellent behavior of a 0.24-μm NMOSFET and PMOSFET fabricated by this technology are also achieved.

Original languageEnglish
Pages (from-to)1740-1742
Number of pages3
JournalIEEE Transactions on Electron Devices
Volume48
Issue number8
DOIs
Publication statusPublished - 2001 Aug 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'A novel double ion-implant (DII) Ti-salicide technology for high-performance sub-0.25-μm CMOS devices applications'. Together they form a unique fingerprint.

Cite this