A novel fabrication of p-n diode based on ZnO nanowire/p-NiO heterojunction

Sheng Po Chang, Chien Yuan Lu, Shoou Jinn Chang, Yu Zung Chiou, Cheng Liang Hsu, Peng Yu Su, Ting Jen Hsueh

Research output: Contribution to journalArticlepeer-review

10 Citations (Scopus)


We report the deposition of NiO onto ZnO nanowires prepared on ZnO:Ga/glass templates. With the sputtered NiO, the nanowires became mushroom-like. Experimental results point out that sputtered NiO also formed nanoshells surrounding ZnO nanowires. The p-NiO/n-ZnO heterostructure exhibits rectifying behavior with a sharp turn on at ∼1 V. Furthermore, the current vs voltage characteristic is dominated by spacecharge-limited current (SCLC) at high (1.1 V) forward bias.

Original languageEnglish
Article number01AJ05
JournalJapanese journal of applied physics
Issue number1 PART 2
Publication statusPublished - 2011 Jan

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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