A novel fabrication of p-n diode based on ZnO nanowire/p-NiO heterojunction

Sheng Po Chang, Chien Yuan Lu, Shoou-Jinn Chang, Yu Zung Chiou, Cheng Liang Hsu, Peng Yu Su, Ting Jen Hsueh

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

We report the deposition of NiO onto ZnO nanowires prepared on ZnO:Ga/glass templates. With the sputtered NiO, the nanowires became mushroom-like. Experimental results point out that sputtered NiO also formed nanoshells surrounding ZnO nanowires. The p-NiO/n-ZnO heterostructure exhibits rectifying behavior with a sharp turn on at ∼1 V. Furthermore, the current vs voltage characteristic is dominated by spacecharge-limited current (SCLC) at high (1.1 V) forward bias.

Original languageEnglish
Article number01AJ05
JournalJapanese Journal of Applied Physics
Volume50
Issue number1 PART 2
DOIs
Publication statusPublished - 2011 Jan 1

Fingerprint

Nanowires
Heterojunctions
heterojunctions
Diodes
nanowires
diodes
Fabrication
fabrication
Nanoshells
templates
Glass
glass
Electric potential
electric potential

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Chang, S. P., Lu, C. Y., Chang, S-J., Chiou, Y. Z., Hsu, C. L., Su, P. Y., & Hsueh, T. J. (2011). A novel fabrication of p-n diode based on ZnO nanowire/p-NiO heterojunction. Japanese Journal of Applied Physics, 50(1 PART 2), [01AJ05]. https://doi.org/10.1143/JJAP.50.01AJ05
Chang, Sheng Po ; Lu, Chien Yuan ; Chang, Shoou-Jinn ; Chiou, Yu Zung ; Hsu, Cheng Liang ; Su, Peng Yu ; Hsueh, Ting Jen. / A novel fabrication of p-n diode based on ZnO nanowire/p-NiO heterojunction. In: Japanese Journal of Applied Physics. 2011 ; Vol. 50, No. 1 PART 2.
@article{b1e35e61e1ad4719b4d27e3f6f65e503,
title = "A novel fabrication of p-n diode based on ZnO nanowire/p-NiO heterojunction",
abstract = "We report the deposition of NiO onto ZnO nanowires prepared on ZnO:Ga/glass templates. With the sputtered NiO, the nanowires became mushroom-like. Experimental results point out that sputtered NiO also formed nanoshells surrounding ZnO nanowires. The p-NiO/n-ZnO heterostructure exhibits rectifying behavior with a sharp turn on at ∼1 V. Furthermore, the current vs voltage characteristic is dominated by spacecharge-limited current (SCLC) at high (1.1 V) forward bias.",
author = "Chang, {Sheng Po} and Lu, {Chien Yuan} and Shoou-Jinn Chang and Chiou, {Yu Zung} and Hsu, {Cheng Liang} and Su, {Peng Yu} and Hsueh, {Ting Jen}",
year = "2011",
month = "1",
day = "1",
doi = "10.1143/JJAP.50.01AJ05",
language = "English",
volume = "50",
journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
issn = "0021-4922",
publisher = "Japan Society of Applied Physics",
number = "1 PART 2",

}

A novel fabrication of p-n diode based on ZnO nanowire/p-NiO heterojunction. / Chang, Sheng Po; Lu, Chien Yuan; Chang, Shoou-Jinn; Chiou, Yu Zung; Hsu, Cheng Liang; Su, Peng Yu; Hsueh, Ting Jen.

In: Japanese Journal of Applied Physics, Vol. 50, No. 1 PART 2, 01AJ05, 01.01.2011.

Research output: Contribution to journalArticle

TY - JOUR

T1 - A novel fabrication of p-n diode based on ZnO nanowire/p-NiO heterojunction

AU - Chang, Sheng Po

AU - Lu, Chien Yuan

AU - Chang, Shoou-Jinn

AU - Chiou, Yu Zung

AU - Hsu, Cheng Liang

AU - Su, Peng Yu

AU - Hsueh, Ting Jen

PY - 2011/1/1

Y1 - 2011/1/1

N2 - We report the deposition of NiO onto ZnO nanowires prepared on ZnO:Ga/glass templates. With the sputtered NiO, the nanowires became mushroom-like. Experimental results point out that sputtered NiO also formed nanoshells surrounding ZnO nanowires. The p-NiO/n-ZnO heterostructure exhibits rectifying behavior with a sharp turn on at ∼1 V. Furthermore, the current vs voltage characteristic is dominated by spacecharge-limited current (SCLC) at high (1.1 V) forward bias.

AB - We report the deposition of NiO onto ZnO nanowires prepared on ZnO:Ga/glass templates. With the sputtered NiO, the nanowires became mushroom-like. Experimental results point out that sputtered NiO also formed nanoshells surrounding ZnO nanowires. The p-NiO/n-ZnO heterostructure exhibits rectifying behavior with a sharp turn on at ∼1 V. Furthermore, the current vs voltage characteristic is dominated by spacecharge-limited current (SCLC) at high (1.1 V) forward bias.

UR - http://www.scopus.com/inward/record.url?scp=79955165538&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79955165538&partnerID=8YFLogxK

U2 - 10.1143/JJAP.50.01AJ05

DO - 10.1143/JJAP.50.01AJ05

M3 - Article

AN - SCOPUS:79955165538

VL - 50

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 1 PART 2

M1 - 01AJ05

ER -