A novel five-channel NMOSFET using selective epitaxial growth (SEG) and lateral solid phase epitaxy (LSPE)

H. Liu; M. Kumar; J. K.O. Sin; W. Jun; K. L. Wang

A novel five-channel NMOSFET using selective epitaxial growth (SEG) and lateral solid phase epitaxy (LSPE)

H. Liu, M. Kumar, J. K.O. Sin, W. Jun, K. L. Wang

College of Electrical Engineering and Computer Science

Research output: Contribution to conference › Paper › peer-review

Abstract

In order to improve the performance of transistors a five-channel (FC) NMOSFET was proposed. The selective epitaxial growth (SEG) and lateral solid phase epitaxy (LSPE) were used in developing new device. The current-voltage characteristics for different channels of the device were also discussed. It was observed that the FC-NMOS provides a current handling capability of 3.6 times higher than conventional NMOS.

Original language	English
Pages	77-78
Number of pages	2
Publication status	Published - 2001
Event	2001 IEEE International SOI Conference - Durango, CO, United States Duration: 2001 Oct 1 → 2001 Oct 4

Conference

Conference	2001 IEEE International SOI Conference
Country/Territory	United States
City	Durango, CO
Period	01-10-01 → 01-10-04

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Cite this

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title = "A novel five-channel NMOSFET using selective epitaxial growth (SEG) and lateral solid phase epitaxy (LSPE)",

abstract = "In order to improve the performance of transistors a five-channel (FC) NMOSFET was proposed. The selective epitaxial growth (SEG) and lateral solid phase epitaxy (LSPE) were used in developing new device. The current-voltage characteristics for different channels of the device were also discussed. It was observed that the FC-NMOS provides a current handling capability of 3.6 times higher than conventional NMOS.",

author = "H. Liu and M. Kumar and Sin, {J. K.O.} and W. Jun and Wang, {K. L.}",

year = "2001",

language = "English",

pages = "77--78",

note = "2001 IEEE International SOI Conference ; Conference date: 01-10-2001 Through 04-10-2001",

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TY - CONF

T1 - A novel five-channel NMOSFET using selective epitaxial growth (SEG) and lateral solid phase epitaxy (LSPE)

AU - Liu, H.

AU - Kumar, M.

AU - Sin, J. K.O.

AU - Jun, W.

AU - Wang, K. L.

PY - 2001

Y1 - 2001

N2 - In order to improve the performance of transistors a five-channel (FC) NMOSFET was proposed. The selective epitaxial growth (SEG) and lateral solid phase epitaxy (LSPE) were used in developing new device. The current-voltage characteristics for different channels of the device were also discussed. It was observed that the FC-NMOS provides a current handling capability of 3.6 times higher than conventional NMOS.

AB - In order to improve the performance of transistors a five-channel (FC) NMOSFET was proposed. The selective epitaxial growth (SEG) and lateral solid phase epitaxy (LSPE) were used in developing new device. The current-voltage characteristics for different channels of the device were also discussed. It was observed that the FC-NMOS provides a current handling capability of 3.6 times higher than conventional NMOS.

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UR - http://www.scopus.com/inward/citedby.url?scp=0035164961&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0035164961

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T2 - 2001 IEEE International SOI Conference

Y2 - 1 October 2001 through 4 October 2001

ER -

A novel five-channel NMOSFET using selective epitaxial growth (SEG) and lateral solid phase epitaxy (LSPE)

Abstract

Conference

All Science Journal Classification (ASJC) codes

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