A novel five-channel NMOSFET using selective epitaxial growth (SEG) and lateral solid phase epitaxy (LSPE)

H. Liu, M. Kumar, J. K.O. Sin, W. Jun, K. L. Wang

Research output: Contribution to conference › Paper › peer-review

Abstract

In order to improve the performance of transistors a five-channel (FC) NMOSFET was proposed. The selective epitaxial growth (SEG) and lateral solid phase epitaxy (LSPE) were used in developing new device. The current-voltage characteristics for different channels of the device were also discussed. It was observed that the FC-NMOS provides a current handling capability of 3.6 times higher than conventional NMOS.

Original languageEnglish
Pages77-78
Number of pages2
Publication statusPublished - 2001
Event2001 IEEE International SOI Conference - Durango, CO, United States
Duration: 2001 Oct 1 → 2001 Oct 4

Conference

Conference2001 IEEE International SOI Conference
CountryUnited States
CityDurango, CO
Period01-10-01 → 01-10-04

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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