Abstract
In order to improve the performance of transistors a five-channel (FC) NMOSFET was proposed. The selective epitaxial growth (SEG) and lateral solid phase epitaxy (LSPE) were used in developing new device. The current-voltage characteristics for different channels of the device were also discussed. It was observed that the FC-NMOS provides a current handling capability of 3.6 times higher than conventional NMOS.
Original language | English |
---|---|
Pages | 77-78 |
Number of pages | 2 |
Publication status | Published - 2001 |
Event | 2001 IEEE International SOI Conference - Durango, CO, United States Duration: 2001 Oct 1 → 2001 Oct 4 |
Conference
Conference | 2001 IEEE International SOI Conference |
---|---|
Country/Territory | United States |
City | Durango, CO |
Period | 01-10-01 → 01-10-04 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering