A novel flash-ion-sensitive field-effect transistor (FISFET) with HfO 2/Gd2O3(Gd) nano-crystal/SiO2 sensing membranes under super nernstian phenomenon for ph and urea detection

Tseng Fu Lu, Jer Chyi Wang, Chao Sung Lai, Chia Ming Yang, Min Hsien Wu, Chuan Pu Liu, Rong Shie Huang, Yu Ching Fang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

An enhanced hydrogen and urea biosensor based on a novel flash-ion-sensitive field-effect transistor (FISFET) with HfO 2/Gd2O3(Gd) nano-crystal/SiO2 sensing membrane is demonstrated experimentally. The super Nernstian phenomenon of hydrogen detection (∼80 mV/pH) is achieved according to the charge trapping effect. The performance of reliability including long-term stability and endurance are systematic studied. For urea detection, the higher sensitivity is obtained (∼20 mV/mM) in the concentration range from 1 to 8 mM.

Original languageEnglish
Title of host publication2009 International Electron Devices Meeting, IEDM 2009 - Technical Digest
Pages26.4.1-26.4.4
DOIs
Publication statusPublished - 2009 Dec 1
Event2009 International Electron Devices Meeting, IEDM 2009 - Baltimore, MD, United States
Duration: 2009 Dec 72009 Dec 9

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)0163-1918

Other

Other2009 International Electron Devices Meeting, IEDM 2009
CountryUnited States
CityBaltimore, MD
Period09-12-0709-12-09

Fingerprint

Ion sensitive field effect transistors
ureas
Urea
flash
Hydrogen
field effect transistors
membranes
Membranes
Charge trapping
Crystals
Biosensors
crystals
ions
Durability
endurance
hydrogen
bioinstrumentation
trapping
sensitivity

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Lu, T. F., Wang, J. C., Lai, C. S., Yang, C. M., Wu, M. H., Liu, C. P., ... Fang, Y. C. (2009). A novel flash-ion-sensitive field-effect transistor (FISFET) with HfO 2/Gd2O3(Gd) nano-crystal/SiO2 sensing membranes under super nernstian phenomenon for ph and urea detection. In 2009 International Electron Devices Meeting, IEDM 2009 - Technical Digest (pp. 26.4.1-26.4.4). [5424289] (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.2009.5424289
Lu, Tseng Fu ; Wang, Jer Chyi ; Lai, Chao Sung ; Yang, Chia Ming ; Wu, Min Hsien ; Liu, Chuan Pu ; Huang, Rong Shie ; Fang, Yu Ching. / A novel flash-ion-sensitive field-effect transistor (FISFET) with HfO 2/Gd2O3(Gd) nano-crystal/SiO2 sensing membranes under super nernstian phenomenon for ph and urea detection. 2009 International Electron Devices Meeting, IEDM 2009 - Technical Digest. 2009. pp. 26.4.1-26.4.4 (Technical Digest - International Electron Devices Meeting, IEDM).
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abstract = "An enhanced hydrogen and urea biosensor based on a novel flash-ion-sensitive field-effect transistor (FISFET) with HfO 2/Gd2O3(Gd) nano-crystal/SiO2 sensing membrane is demonstrated experimentally. The super Nernstian phenomenon of hydrogen detection (∼80 mV/pH) is achieved according to the charge trapping effect. The performance of reliability including long-term stability and endurance are systematic studied. For urea detection, the higher sensitivity is obtained (∼20 mV/mM) in the concentration range from 1 to 8 mM.",
author = "Lu, {Tseng Fu} and Wang, {Jer Chyi} and Lai, {Chao Sung} and Yang, {Chia Ming} and Wu, {Min Hsien} and Liu, {Chuan Pu} and Huang, {Rong Shie} and Fang, {Yu Ching}",
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Lu, TF, Wang, JC, Lai, CS, Yang, CM, Wu, MH, Liu, CP, Huang, RS & Fang, YC 2009, A novel flash-ion-sensitive field-effect transistor (FISFET) with HfO 2/Gd2O3(Gd) nano-crystal/SiO2 sensing membranes under super nernstian phenomenon for ph and urea detection. in 2009 International Electron Devices Meeting, IEDM 2009 - Technical Digest., 5424289, Technical Digest - International Electron Devices Meeting, IEDM, pp. 26.4.1-26.4.4, 2009 International Electron Devices Meeting, IEDM 2009, Baltimore, MD, United States, 09-12-07. https://doi.org/10.1109/IEDM.2009.5424289

A novel flash-ion-sensitive field-effect transistor (FISFET) with HfO 2/Gd2O3(Gd) nano-crystal/SiO2 sensing membranes under super nernstian phenomenon for ph and urea detection. / Lu, Tseng Fu; Wang, Jer Chyi; Lai, Chao Sung; Yang, Chia Ming; Wu, Min Hsien; Liu, Chuan Pu; Huang, Rong Shie; Fang, Yu Ching.

2009 International Electron Devices Meeting, IEDM 2009 - Technical Digest. 2009. p. 26.4.1-26.4.4 5424289 (Technical Digest - International Electron Devices Meeting, IEDM).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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Lu TF, Wang JC, Lai CS, Yang CM, Wu MH, Liu CP et al. A novel flash-ion-sensitive field-effect transistor (FISFET) with HfO 2/Gd2O3(Gd) nano-crystal/SiO2 sensing membranes under super nernstian phenomenon for ph and urea detection. In 2009 International Electron Devices Meeting, IEDM 2009 - Technical Digest. 2009. p. 26.4.1-26.4.4. 5424289. (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.2009.5424289