A novel flash-ion-sensitive field-effect transistor (FISFET) with HfO 2/Gd2O3(Gd) nano-crystal/SiO2 sensing membranes under super nernstian phenomenon for ph and urea detection

Tseng Fu Lu; Jer Chyi Wang; Chao Sung Lai; Chia Ming Yang; Min Hsien Wu; Chuan Pu Liu; Rong Shie Huang; Yu Ching Fang

doi:10.1109/IEDM.2009.5424289

A novel flash-ion-sensitive field-effect transistor (FISFET) with HfO ₂/Gd₂O₃(Gd) nano-crystal/SiO₂ sensing membranes under super nernstian phenomenon for ph and urea detection

Tseng Fu Lu, Jer Chyi Wang, Chao Sung Lai, Chia Ming Yang, Min Hsien Wu, Chuan Pu Liu, Rong Shie Huang, Yu Ching Fang

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

An enhanced hydrogen and urea biosensor based on a novel flash-ion-sensitive field-effect transistor (FISFET) with HfO ₂/Gd₂O₃(Gd) nano-crystal/SiO₂ sensing membrane is demonstrated experimentally. The super Nernstian phenomenon of hydrogen detection (∼80 mV/pH) is achieved according to the charge trapping effect. The performance of reliability including long-term stability and endurance are systematic studied. For urea detection, the higher sensitivity is obtained (∼20 mV/mM) in the concentration range from 1 to 8 mM.

Original language	English
Title of host publication	2009 International Electron Devices Meeting, IEDM 2009 - Technical Digest
Pages	26.4.1-26.4.4
DOIs	https://doi.org/10.1109/IEDM.2009.5424289
Publication status	Published - 2009
Event	2009 International Electron Devices Meeting, IEDM 2009 - Baltimore, MD, United States Duration: 2009 Dec 7 → 2009 Dec 9

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)	0163-1918

Other

Other	2009 International Electron Devices Meeting, IEDM 2009
Country/Territory	United States
City	Baltimore, MD
Period	09-12-07 → 09-12-09

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Access to Document

10.1109/IEDM.2009.5424289

Cite this

Lu, T. F., Wang, J. C., Lai, C. S., Yang, C. M., Wu, M. H., Liu, C. P., Huang, R. S., & Fang, Y. C. (2009). A novel flash-ion-sensitive field-effect transistor (FISFET) with HfO ₂/Gd₂O₃(Gd) nano-crystal/SiO₂ sensing membranes under super nernstian phenomenon for ph and urea detection. In 2009 International Electron Devices Meeting, IEDM 2009 - Technical Digest (pp. 26.4.1-26.4.4). Article 5424289 (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.2009.5424289

Lu, Tseng Fu ; Wang, Jer Chyi ; Lai, Chao Sung et al. / A novel flash-ion-sensitive field-effect transistor (FISFET) with HfO ₂/Gd₂O₃(Gd) nano-crystal/SiO₂ sensing membranes under super nernstian phenomenon for ph and urea detection. 2009 International Electron Devices Meeting, IEDM 2009 - Technical Digest. 2009. pp. 26.4.1-26.4.4 (Technical Digest - International Electron Devices Meeting, IEDM).

@inproceedings{3c8a90a8534b4828b64a8cf4c496c545,

title = "A novel flash-ion-sensitive field-effect transistor (FISFET) with HfO 2/Gd2O3(Gd) nano-crystal/SiO2 sensing membranes under super nernstian phenomenon for ph and urea detection",

abstract = "An enhanced hydrogen and urea biosensor based on a novel flash-ion-sensitive field-effect transistor (FISFET) with HfO 2/Gd2O3(Gd) nano-crystal/SiO2 sensing membrane is demonstrated experimentally. The super Nernstian phenomenon of hydrogen detection (∼80 mV/pH) is achieved according to the charge trapping effect. The performance of reliability including long-term stability and endurance are systematic studied. For urea detection, the higher sensitivity is obtained (∼20 mV/mM) in the concentration range from 1 to 8 mM.",

author = "Lu, {Tseng Fu} and Wang, {Jer Chyi} and Lai, {Chao Sung} and Yang, {Chia Ming} and Wu, {Min Hsien} and Liu, {Chuan Pu} and Huang, {Rong Shie} and Fang, {Yu Ching}",

year = "2009",

doi = "10.1109/IEDM.2009.5424289",

language = "English",

isbn = "9781424456406",

series = "Technical Digest - International Electron Devices Meeting, IEDM",

pages = "26.4.1--26.4.4",

booktitle = "2009 International Electron Devices Meeting, IEDM 2009 - Technical Digest",

note = "2009 International Electron Devices Meeting, IEDM 2009 ; Conference date: 07-12-2009 Through 09-12-2009",

}

Lu, TF, Wang, JC, Lai, CS, Yang, CM, Wu, MH, Liu, CP, Huang, RS & Fang, YC 2009, A novel flash-ion-sensitive field-effect transistor (FISFET) with HfO ₂/Gd₂O₃(Gd) nano-crystal/SiO₂ sensing membranes under super nernstian phenomenon for ph and urea detection. in 2009 International Electron Devices Meeting, IEDM 2009 - Technical Digest., 5424289, Technical Digest - International Electron Devices Meeting, IEDM, pp. 26.4.1-26.4.4, 2009 International Electron Devices Meeting, IEDM 2009, Baltimore, MD, United States, 09-12-07. https://doi.org/10.1109/IEDM.2009.5424289

A novel flash-ion-sensitive field-effect transistor (FISFET) with HfO ₂/Gd₂O₃(Gd) nano-crystal/SiO₂ sensing membranes under super nernstian phenomenon for ph and urea detection. / Lu, Tseng Fu; Wang, Jer Chyi; Lai, Chao Sung et al.
2009 International Electron Devices Meeting, IEDM 2009 - Technical Digest. 2009. p. 26.4.1-26.4.4 5424289 (Technical Digest - International Electron Devices Meeting, IEDM).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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AU - Wang, Jer Chyi

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AB - An enhanced hydrogen and urea biosensor based on a novel flash-ion-sensitive field-effect transistor (FISFET) with HfO 2/Gd2O3(Gd) nano-crystal/SiO2 sensing membrane is demonstrated experimentally. The super Nernstian phenomenon of hydrogen detection (∼80 mV/pH) is achieved according to the charge trapping effect. The performance of reliability including long-term stability and endurance are systematic studied. For urea detection, the higher sensitivity is obtained (∼20 mV/mM) in the concentration range from 1 to 8 mM.

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Lu TF, Wang JC, Lai CS, Yang CM, Wu MH, Liu CP et al. A novel flash-ion-sensitive field-effect transistor (FISFET) with HfO ₂/Gd₂O₃(Gd) nano-crystal/SiO₂ sensing membranes under super nernstian phenomenon for ph and urea detection. In 2009 International Electron Devices Meeting, IEDM 2009 - Technical Digest. 2009. p. 26.4.1-26.4.4. 5424289. (Technical Digest - International Electron Devices Meeting, IEDM). doi: 10.1109/IEDM.2009.5424289