A novel flash-ion-sensitive field-effect transistor (FISFET) with HfO 2/Gd2O3(Gd) nano-crystal/SiO2 sensing membranes under super nernstian phenomenon for ph and urea detection

Tseng Fu Lu, Jer Chyi Wang, Chao Sung Lai, Chia Ming Yang, Min Hsien Wu, Chuan Pu Liu, Rong Shie Huang, Yu Ching Fang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

An enhanced hydrogen and urea biosensor based on a novel flash-ion-sensitive field-effect transistor (FISFET) with HfO 2/Gd2O3(Gd) nano-crystal/SiO2 sensing membrane is demonstrated experimentally. The super Nernstian phenomenon of hydrogen detection (∼80 mV/pH) is achieved according to the charge trapping effect. The performance of reliability including long-term stability and endurance are systematic studied. For urea detection, the higher sensitivity is obtained (∼20 mV/mM) in the concentration range from 1 to 8 mM.

Original languageEnglish
Title of host publication2009 International Electron Devices Meeting, IEDM 2009 - Technical Digest
Pages26.4.1-26.4.4
DOIs
Publication statusPublished - 2009 Dec 1
Event2009 International Electron Devices Meeting, IEDM 2009 - Baltimore, MD, United States
Duration: 2009 Dec 72009 Dec 9

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)0163-1918

Other

Other2009 International Electron Devices Meeting, IEDM 2009
CountryUnited States
CityBaltimore, MD
Period09-12-0709-12-09

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Fingerprint Dive into the research topics of 'A novel flash-ion-sensitive field-effect transistor (FISFET) with HfO <sub>2</sub>/Gd<sub>2</sub>O<sub>3</sub>(Gd) nano-crystal/SiO<sub>2</sub> sensing membranes under super nernstian phenomenon for ph and urea detection'. Together they form a unique fingerprint.

Cite this