A novel functional heterostructure-emitter and hereostructure-base transistor (HEHBT)

Wen-Chau Liu, J. H. Tsai, S. Y. Cheng, P. H. Lin, W. C. Wang, J. Y. Chen

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A new functional heterostructure-emitter and heterostructure-base bipolar transistor (HEHBT) with a pseudomorphic quantum-well (QW) base structure is presented. Due to the insertion of an InGaAs quantum well between the emitter-base (E-B) junction, the valence band discontinuity can be enhanced and a high emitter injection efficiency may be achieved. In addition, an interesting Sshaped multiple negative-differential-resistance (MNDR) phenomenon is observed under the inverted operation mode. This may be attributed to an avalanche multiplication and sequential two-stage barrier lowering effect resulting from electrons accumulation at the AlGaAs/GaAs heterointerface and the InGaAs QW, respectively. Consequently, owing to the transistor performance and MNDR characteristics, the HEHBT shows a good promise for amplification and multiplevalued logic circuit applications.

Original languageEnglish
Title of host publicationEuropean Solid-State Device Research Conference
EditorsH. Grunbacher
PublisherIEEE Computer Society
Pages716-719
Number of pages4
ISBN (Electronic)2863322214
DOIs
Publication statusPublished - 1997 Jan 1
Event27th European Solid-State Device Research Conference, ESSDERC 1997 - Stuttgart, Germany
Duration: 1997 Sep 221997 Sep 24

Publication series

NameEuropean Solid-State Device Research Conference
ISSN (Print)1930-8876

Other

Other27th European Solid-State Device Research Conference, ESSDERC 1997
CountryGermany
CityStuttgart
Period97-09-2297-09-24

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Safety, Risk, Reliability and Quality

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