@inproceedings{496921f8b7c4471b8fbed884442b80ce,
title = "A novel functional heterostructure-emitter and hereostructure-base transistor (HEHBT)",
abstract = "A new functional heterostructure-emitter and heterostructure-base bipolar transistor (HEHBT) with a pseudomorphic quantum-well (QW) base structure is presented. Due to the insertion of an InGaAs quantum well between the emitter-base (E-B) junction, the valence band discontinuity can be enhanced and a high emitter injection efficiency may be achieved. In addition, an interesting Sshaped multiple negative-differential-resistance (MNDR) phenomenon is observed under the inverted operation mode. This may be attributed to an avalanche multiplication and sequential two-stage barrier lowering effect resulting from electrons accumulation at the AlGaAs/GaAs heterointerface and the InGaAs QW, respectively. Consequently, owing to the transistor performance and MNDR characteristics, the HEHBT shows a good promise for amplification and multiplevalued logic circuit applications.",
author = "Liu, {W. C.} and Tsai, {J. H.} and Cheng, {S. Y.} and Lin, {P. H.} and Wang, {W. C.} and Chen, {J. Y.}",
year = "1997",
doi = "10.1109/ESSDERC.1997.194529",
language = "English",
series = "European Solid-State Device Research Conference",
publisher = "IEEE Computer Society",
pages = "716--719",
editor = "H. Grunbacher",
booktitle = "European Solid-State Device Research Conference",
address = "United States",
note = "27th European Solid-State Device Research Conference, ESSDERC 1997 ; Conference date: 22-09-1997 Through 24-09-1997",
}