A novel functional negative-differential-resistance heterojunction bipolar transistor (NDR-HBT)

W. C. Liu, W. C. Wang, H. J. Pan, C. C. Cheng, S. C. Feng, C. H. Yen, K. W. Lin

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A novel functional negative-differentialresistance heterojunction bipolar transistor (NDR-HBT) has been successfully fabricated and demonstrated. The studied device acts as a conventional HBT for the applied higher base current of IB=100μA/step. However, the NDR phenomenon with interesting topee-shaped current-voltage characteristics was observed under the applied base current of IB=2μA/step. These are attributed to the use of narrow base width and ä-doped sheet in the studied device. Besides, the N-shaped NDR phenomena are obviously observed under the applied tungsten light source. The peak-to-valley current ratio (PVCR) up to 1.5 is obtained for the base current IB=60μA. The photocurrent is about 1.01mA and keeps constantly under the applied higher base current.

Original languageEnglish
Title of host publicationESSDERC 2000 - Proceedings of the 30th European Solid-State Device Research Conference
EditorsH. Grunbacher, Gabriel M. Crean, W. A. Lane, Frank A. McCabe
PublisherIEEE Computer Society
Pages244-247
Number of pages4
ISBN (Electronic)2863322486
ISBN (Print)9782863322482
DOIs
Publication statusPublished - 2000
Event30th European Solid-State Device Research Conference, ESSDERC 2000 - Cork, Ireland
Duration: 2000 Sep 112000 Sep 13

Publication series

NameEuropean Solid-State Device Research Conference
ISSN (Print)1930-8876

Other

Other30th European Solid-State Device Research Conference, ESSDERC 2000
CountryIreland
CityCork
Period00-09-1100-09-13

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Safety, Risk, Reliability and Quality

Fingerprint Dive into the research topics of 'A novel functional negative-differential-resistance heterojunction bipolar transistor (NDR-HBT)'. Together they form a unique fingerprint.

Cite this