A novel gaas current-controlled bipolar-unipolar transition negative differential resistance transistor prepared by molecular-beam epitaxy

K. F. Yarn, Yeong-Her Wang, C. Y. Chang

Research output: Contribution to journalArticle

Abstract

GaAs current-controlled bipolar-unipolar transition negative differential resistance (NDR) transistors using n+-i-p+-i-n+structure prepared by molecular- beam epitaxy (MBE) are demonstrated. Using a base thickness of 200 Å and a highly doped sheet concentration of 1013cm-2, a NDR phenomenon is revealed at base low injection level. The peak-to-valley current ratios are about eight at room temperature. This is proposed to be due to the bipolar-unipolar transition reaction. When the base is under a high injection level, the proposed device operates just like a conventional bipolar transistor. A hypothetical model is used and confirmed by experiments.

Original languageEnglish
Pages (from-to)333-338
Number of pages6
JournalPhilosophical Magazine Letters
Volume61
Issue number6
DOIs
Publication statusPublished - 1990 Jan 1

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transistors
molecular beam epitaxy
injection
bipolar transistors
valleys
room temperature

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics

Cite this

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abstract = "GaAs current-controlled bipolar-unipolar transition negative differential resistance (NDR) transistors using n+-i-p+-i-n+structure prepared by molecular- beam epitaxy (MBE) are demonstrated. Using a base thickness of 200 {\AA} and a highly doped sheet concentration of 1013cm-2, a NDR phenomenon is revealed at base low injection level. The peak-to-valley current ratios are about eight at room temperature. This is proposed to be due to the bipolar-unipolar transition reaction. When the base is under a high injection level, the proposed device operates just like a conventional bipolar transistor. A hypothetical model is used and confirmed by experiments.",
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A novel gaas current-controlled bipolar-unipolar transition negative differential resistance transistor prepared by molecular-beam epitaxy. / Yarn, K. F.; Wang, Yeong-Her; Chang, C. Y.

In: Philosophical Magazine Letters, Vol. 61, No. 6, 01.01.1990, p. 333-338.

Research output: Contribution to journalArticle

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