@article{31ee798488524ea1a09969809f436a01,
title = "A novel gaas current-controlled bipolar-unipolar transition negative differential resistance transistor prepared by molecular-beam epitaxy",
abstract = "GaAs current-controlled bipolar-unipolar transition negative differential resistance (NDR) transistors using n+-i-p+-i-n+structure prepared by molecular- beam epitaxy (MBE) are demonstrated. Using a base thickness of 200 {\AA} and a highly doped sheet concentration of 1013cm-2, a NDR phenomenon is revealed at base low injection level. The peak-to-valley current ratios are about eight at room temperature. This is proposed to be due to the bipolar-unipolar transition reaction. When the base is under a high injection level, the proposed device operates just like a conventional bipolar transistor. A hypothetical model is used and confirmed by experiments.",
author = "Yarn, \{K. F.\} and Wang, \{Y. H.\} and Chang, \{C. Y.\}",
note = "Funding Information: For a base thickness of 200 A, NDR characteristics are revealed only at low base injection level. These interesting phenomena are investigated in terms of a proposed bipolar-unipolar transition model. In this device, Zp/Zv = 8 for I, c 100 pA has been obtained at room temperature. The base transition thickness seems to be between 90 A and 250.k ACKNOWLEDGMENTS The authors would like to thank R. L. Wang and H. R. Sze for their technical assistance. Also, we are pleased to express our appreciation to Dr C. S. Chang for his useful discussion. This work was partially supported by the National Science Council under contract No. NSC-79-0417-EW6-02.",
year = "1990",
month = jun,
doi = "10.1080/09500839008206501",
language = "English",
volume = "61",
pages = "333--338",
journal = "Philosophical Magazine Letters",
issn = "0950-0839",
publisher = "Taylor and Francis Ltd.",
number = "6",
}