A Novel Gate-all-around Ultra-thin Body Field Effect Transistor (G-UTBFET) with Enhanced Short Channel Behaviors and Low Off-state Leakage Current

I. Chin Huang; Shui-Jinn Wang; Ya Chi Huang; Hsiang Yi Chen; Meng-Hsueh Chiang

A Novel Gate-all-around Ultra-thin Body Field Effect Transistor (G-UTBFET) with Enhanced Short Channel Behaviors and Low Off-state Leakage Current

I. Chin Huang, Shui-Jinn Wang, Ya Chi Huang, Hsiang Yi Chen, Meng-Hsueh Chiang

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Original language	English
Title of host publication	2018 IEEE Silicon Nanoelectronics Workshop (SNW)
Publication status	Published - 2018 Jun 17

Cite this

@inproceedings{05b135db5ed2446d98b2c04cc3fc0728,

title = "A Novel Gate-all-around Ultra-thin Body Field Effect Transistor (G-UTBFET) with Enhanced Short Channel Behaviors and Low Off-state Leakage Current",

author = "Huang, {I. Chin} and Shui-Jinn Wang and Huang, {Ya Chi} and Chen, {Hsiang Yi} and Meng-Hsueh Chiang",

year = "2018",

month = jun,

day = "17",

language = "English",

booktitle = "2018 IEEE Silicon Nanoelectronics Workshop (SNW)",

}

TY - GEN

T1 - A Novel Gate-all-around Ultra-thin Body Field Effect Transistor (G-UTBFET) with Enhanced Short Channel Behaviors and Low Off-state Leakage Current

AU - Huang, I. Chin

AU - Wang, Shui-Jinn

AU - Huang, Ya Chi

AU - Chen, Hsiang Yi

AU - Chiang, Meng-Hsueh

PY - 2018/6/17

Y1 - 2018/6/17

M3 - Conference contribution

BT - 2018 IEEE Silicon Nanoelectronics Workshop (SNW)

ER -