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A Novel Gate-all-around Ultra-thin Body Field Effect Transistor (G-UTBFET) with Enhanced Short Channel Behaviors and Low Off-state Leakage Current

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Original languageEnglish
Title of host publication2018 IEEE Silicon Nanoelectronics Workshop (SNW)
Publication statusPublished - 2018 Jun 17

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