TY - JOUR
T1 - A novel high-sensitive Pd/InP hydrogen sensor fabricated by electroless plating
AU - Chen, Huey Ing
AU - Chou, Yen I.
AU - Chu, Chin Yi
N1 - Funding Information:
The authors would like to thank Prof. W.C. Liu and Dr. H.J. Pan, Department of Electric Engineering, Institute of Microelectronics, NCKU, Taiwan, for their technical assistances and helpful discussion. Part of this work was supported by the National Science Council of the Republic of China under Contract no. NSC89-2214-E006-022, to which the authors also wish to express their thanks.
PY - 2002/6/20
Y1 - 2002/6/20
N2 - In this work, a novel electroless plating technique was proposed to fabricate high-sensitive Pd/InP Schottky diode hydrogen sensors. The Schottky current-voltage (I-V) characteristics were investigated at hydrogen concentrations in air ranging from 15-10,000 ppm. Experimental results show that the Schottky diode characteristics for the sensor devices obtained by electroless plating are superior to those obtained by the conventional thermal evaporation. Furthermore, due to the low-energy fabrication, the Fermi-level pinning effect can be avoided and therefore, the sensor device exhibits high sensitivity on hydrogen. Even at very low hydrogen concentration of 15 ppm, the saturation sensitivity reaches about 2.07. Further analyzing the I-V data, it shows that the experimental results are in a good agreement with the proposed hydrogen adsorption model.
AB - In this work, a novel electroless plating technique was proposed to fabricate high-sensitive Pd/InP Schottky diode hydrogen sensors. The Schottky current-voltage (I-V) characteristics were investigated at hydrogen concentrations in air ranging from 15-10,000 ppm. Experimental results show that the Schottky diode characteristics for the sensor devices obtained by electroless plating are superior to those obtained by the conventional thermal evaporation. Furthermore, due to the low-energy fabrication, the Fermi-level pinning effect can be avoided and therefore, the sensor device exhibits high sensitivity on hydrogen. Even at very low hydrogen concentration of 15 ppm, the saturation sensitivity reaches about 2.07. Further analyzing the I-V data, it shows that the experimental results are in a good agreement with the proposed hydrogen adsorption model.
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U2 - 10.1016/S0925-4005(02)00044-8
DO - 10.1016/S0925-4005(02)00044-8
M3 - Article
AN - SCOPUS:0037141786
SN - 0925-4005
VL - 85
SP - 10
EP - 18
JO - Sensors and Actuators, B: Chemical
JF - Sensors and Actuators, B: Chemical
IS - 1-2
ER -