A novel horizontal current bipolar transistor (HCBT) for vertical BiCMOS integration

T. Suligoj, P. Biljanović, K. L. Wang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In order to improve the integrability with vertical MOS processes, a new HCBT process is developed, fabricated and presented in this work for the first time. Its fabrication process is simplified mainly by reducing the number of lithography masks to 5 (including 1 metal layer), using CMP and etch-back techniques for isolation and the reduction of parasitic capacitances, and self-aligned base implantation. Also, a new HCBT technology is applicable to both bulk Si and SOI substrates, whereas the existing lateral bipolar transistors (LBTs) are processed exclusively on SOI.

Original languageEnglish
Title of host publication60th Device Research Conference, DRC 2002
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages89-90
Number of pages2
ISBN (Electronic)0780373170
DOIs
Publication statusPublished - 2002
Event60th Device Research Conference, DRC 2002 - Santa Barbara, United States
Duration: 2002 Jun 242002 Jun 26

Publication series

NameDevice Research Conference - Conference Digest, DRC
Volume2002-January
ISSN (Print)1548-3770

Conference

Conference60th Device Research Conference, DRC 2002
CountryUnited States
CitySanta Barbara
Period02-06-2402-06-26

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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