We report two-terminal real-space transfer diode (RSTD) using InAlAs/InGaAs heterojunction grown by low-pressure metalorganic chemical vapor deposition (LP-MOCVD). By virtue of nonalloyed ohmic contacts as well as a sewer layer which is electrically separated from ohmic electrodes, a carrier density modulation and a strong negative differential resistance can be obtained. The peak-to-valley current ratio up to 140 000 (1×106) at 300 (77) K are, to our knowledge, among the best for InaAlAs/InGaAs structures. The proposed device also reveals sharp charge injection and broad valley range.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering