A novel InAlAs/InGaAs two-terminal real-space transfer diode

Jan Shing Su; Wei Chou Hsu; Yu Shyan Lin; Wei Lin; Chang Luen Wu; Ming Shang Tsai; Yu Huei Wu

doi:10.1109/55.484118

A novel InAlAs/InGaAs two-terminal real-space transfer diode

Jan Shing Su, Wei Chou Hsu, Yu Shyan Lin, Wei Lin, Chang Luen Wu, Ming Shang Tsai, Yu Huei Wu

Institute of Microelectronics

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

We report two-terminal real-space transfer diode (RSTD) using InAlAs/InGaAs heterojunction grown by low-pressure metalorganic chemical vapor deposition (LP-MOCVD). By virtue of nonalloyed ohmic contacts as well as a sewer layer which is electrically separated from ohmic electrodes, a carrier density modulation and a strong negative differential resistance can be obtained. The peak-to-valley current ratio up to 140 000 (1×10⁶) at 300 (77) K are, to our knowledge, among the best for InaAlAs/InGaAs structures. The proposed device also reveals sharp charge injection and broad valley range.

Original language	English
Pages (from-to)	43-45
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	17
Issue number	2
DOIs	https://doi.org/10.1109/55.484118
Publication status	Published - 1996 Feb

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/55.484118

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title = "A novel InAlAs/InGaAs two-terminal real-space transfer diode",

abstract = "We report two-terminal real-space transfer diode (RSTD) using InAlAs/InGaAs heterojunction grown by low-pressure metalorganic chemical vapor deposition (LP-MOCVD). By virtue of nonalloyed ohmic contacts as well as a sewer layer which is electrically separated from ohmic electrodes, a carrier density modulation and a strong negative differential resistance can be obtained. The peak-to-valley current ratio up to 140 000 (1×106) at 300 (77) K are, to our knowledge, among the best for InaAlAs/InGaAs structures. The proposed device also reveals sharp charge injection and broad valley range.",

author = "Su, {Jan Shing} and Hsu, {Wei Chou} and Lin, {Yu Shyan} and Wei Lin and Wu, {Chang Luen} and Tsai, {Ming Shang} and Wu, {Yu Huei}",

note = "Funding Information: Manuscript received August 21, 1995. This work was supported by the National Science Council, R.O.C., under Contract NSC 84-2215-E-006-017.",

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T1 - A novel InAlAs/InGaAs two-terminal real-space transfer diode

AU - Su, Jan Shing

AU - Hsu, Wei Chou

AU - Lin, Yu Shyan

AU - Lin, Wei

AU - Wu, Chang Luen

AU - Tsai, Ming Shang

AU - Wu, Yu Huei

N1 - Funding Information: Manuscript received August 21, 1995. This work was supported by the National Science Council, R.O.C., under Contract NSC 84-2215-E-006-017.

PY - 1996/2

Y1 - 1996/2

N2 - We report two-terminal real-space transfer diode (RSTD) using InAlAs/InGaAs heterojunction grown by low-pressure metalorganic chemical vapor deposition (LP-MOCVD). By virtue of nonalloyed ohmic contacts as well as a sewer layer which is electrically separated from ohmic electrodes, a carrier density modulation and a strong negative differential resistance can be obtained. The peak-to-valley current ratio up to 140 000 (1×106) at 300 (77) K are, to our knowledge, among the best for InaAlAs/InGaAs structures. The proposed device also reveals sharp charge injection and broad valley range.

AB - We report two-terminal real-space transfer diode (RSTD) using InAlAs/InGaAs heterojunction grown by low-pressure metalorganic chemical vapor deposition (LP-MOCVD). By virtue of nonalloyed ohmic contacts as well as a sewer layer which is electrically separated from ohmic electrodes, a carrier density modulation and a strong negative differential resistance can be obtained. The peak-to-valley current ratio up to 140 000 (1×106) at 300 (77) K are, to our knowledge, among the best for InaAlAs/InGaAs structures. The proposed device also reveals sharp charge injection and broad valley range.

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A novel InAlAs/InGaAs two-terminal real-space transfer diode

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