A novel InAlAs/InGaAs two-terminal real-space transfer diode

Jan Shing Su, Wei-Chou Hsu, Yu Shyan Lin, Wei Lin, Chang Luen Wu, Ming Shang Tsai, Yu Huei Wu

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We report two-terminal real-space transfer diode (RSTD) using InAlAs/InGaAs heterojunction grown by low-pressure metalorganic chemical vapor deposition (LP-MOCVD). By virtue of nonalloyed ohmic contacts as well as a sewer layer which is electrically separated from ohmic electrodes, a carrier density modulation and a strong negative differential resistance can be obtained. The peak-to-valley current ratio up to 140 000 (1×106) at 300 (77) K are, to our knowledge, among the best for InaAlAs/InGaAs structures. The proposed device also reveals sharp charge injection and broad valley range.

Original languageEnglish
Pages (from-to)43-45
Number of pages3
JournalIEEE Electron Device Letters
Issue number2
Publication statusPublished - 1996 Feb 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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    Su, J. S., Hsu, W-C., Lin, Y. S., Lin, W., Wu, C. L., Tsai, M. S., & Wu, Y. H. (1996). A novel InAlAs/InGaAs two-terminal real-space transfer diode. IEEE Electron Device Letters, 17(2), 43-45. https://doi.org/10.1109/55.484118