A novel InP/InGaAs tunneling emitter bipolar transistor (TEBT) is fabricated and demonstrated. The studied device exhibits a very small collector-emitter offset voltage of 40 mV and an extremely wide operation regime. The operation region is larger than 11 decades in magnitude of collector current (10-12 to 10-1 A). A current gain of 3 is obtained even the device is operated at an ultralow collector current of 3.9 × 10-12 A (1.56 × 10-7 A/cm2). Furthermore, the common-emitter breakdown voltage of the studied device is higher than 2 V. Consequently, the studied device shows a promise for low supply voltage, and low-power consumption circuit applications.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering