A novel InP/InGaAs TEBT for ultralow current operations

Chun Yuan Chen; Shiou Ying Cheng; Wen Hui Chiou; Hung Ming Chuang; Wen Chau Liu

doi:10.1109/LED.2003.809529

A novel InP/InGaAs TEBT for ultralow current operations

Chun Yuan Chen, Shiou Ying Cheng, Wen Hui Chiou, Hung Ming Chuang, Wen Chau Liu

Research output: Contribution to journal › Letter › peer-review

8 Citations (Scopus)

Abstract

A novel InP/InGaAs tunneling emitter bipolar transistor (TEBT) is fabricated and demonstrated. The studied device exhibits a very small collector-emitter offset voltage of 40 mV and an extremely wide operation regime. The operation region is larger than 11 decades in magnitude of collector current (10^-12 to 10^-1 A). A current gain of 3 is obtained even the device is operated at an ultralow collector current of 3.9 × 10^-12 A (1.56 × 10^-7 A/cm²). Furthermore, the common-emitter breakdown voltage of the studied device is higher than 2 V. Consequently, the studied device shows a promise for low supply voltage, and low-power consumption circuit applications.

Original language	English
Pages (from-to)	126-128
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	24
Issue number	3
DOIs	https://doi.org/10.1109/LED.2003.809529
Publication status	Published - 2003 Mar

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/LED.2003.809529

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title = "A novel InP/InGaAs TEBT for ultralow current operations",

abstract = "A novel InP/InGaAs tunneling emitter bipolar transistor (TEBT) is fabricated and demonstrated. The studied device exhibits a very small collector-emitter offset voltage of 40 mV and an extremely wide operation regime. The operation region is larger than 11 decades in magnitude of collector current (10-12 to 10-1 A). A current gain of 3 is obtained even the device is operated at an ultralow collector current of 3.9 × 10-12 A (1.56 × 10-7 A/cm2). Furthermore, the common-emitter breakdown voltage of the studied device is higher than 2 V. Consequently, the studied device shows a promise for low supply voltage, and low-power consumption circuit applications.",

author = "Chen, {Chun Yuan} and Cheng, {Shiou Ying} and Chiou, {Wen Hui} and Chuang, {Hung Ming} and Liu, {Wen Chau}",

note = "Funding Information: Manuscript received November 8, 2002; revised December 12, 2002. This work was supported in part by the National Science Council of Taiwan, R.O.C., under Contract NSC 90-2215-E006-021. The review of this letter was arranged by Editor D. Ueda.",

year = "2003",

month = mar,

doi = "10.1109/LED.2003.809529",

language = "English",

volume = "24",

pages = "126--128",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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T1 - A novel InP/InGaAs TEBT for ultralow current operations

AU - Chen, Chun Yuan

AU - Cheng, Shiou Ying

AU - Chiou, Wen Hui

AU - Chuang, Hung Ming

AU - Liu, Wen Chau

N1 - Funding Information: Manuscript received November 8, 2002; revised December 12, 2002. This work was supported in part by the National Science Council of Taiwan, R.O.C., under Contract NSC 90-2215-E006-021. The review of this letter was arranged by Editor D. Ueda.

PY - 2003/3

Y1 - 2003/3

N2 - A novel InP/InGaAs tunneling emitter bipolar transistor (TEBT) is fabricated and demonstrated. The studied device exhibits a very small collector-emitter offset voltage of 40 mV and an extremely wide operation regime. The operation region is larger than 11 decades in magnitude of collector current (10-12 to 10-1 A). A current gain of 3 is obtained even the device is operated at an ultralow collector current of 3.9 × 10-12 A (1.56 × 10-7 A/cm2). Furthermore, the common-emitter breakdown voltage of the studied device is higher than 2 V. Consequently, the studied device shows a promise for low supply voltage, and low-power consumption circuit applications.

AB - A novel InP/InGaAs tunneling emitter bipolar transistor (TEBT) is fabricated and demonstrated. The studied device exhibits a very small collector-emitter offset voltage of 40 mV and an extremely wide operation regime. The operation region is larger than 11 decades in magnitude of collector current (10-12 to 10-1 A). A current gain of 3 is obtained even the device is operated at an ultralow collector current of 3.9 × 10-12 A (1.56 × 10-7 A/cm2). Furthermore, the common-emitter breakdown voltage of the studied device is higher than 2 V. Consequently, the studied device shows a promise for low supply voltage, and low-power consumption circuit applications.

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DO - 10.1109/LED.2003.809529

M3 - Letter

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SN - 0741-3106

VL - 24

SP - 126

EP - 128

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 3

ER -

A novel InP/InGaAs TEBT for ultralow current operations

Abstract

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