A novel InP/InGaAs TEBT for ultralow current operations

Chun Yuan Chen, Shiou Ying Cheng, Wen Hui Chiou, Hung Ming Chuang, Wen Chau Liu

Research output: Contribution to journalLetterpeer-review

8 Citations (Scopus)


A novel InP/InGaAs tunneling emitter bipolar transistor (TEBT) is fabricated and demonstrated. The studied device exhibits a very small collector-emitter offset voltage of 40 mV and an extremely wide operation regime. The operation region is larger than 11 decades in magnitude of collector current (10-12 to 10-1 A). A current gain of 3 is obtained even the device is operated at an ultralow collector current of 3.9 × 10-12 A (1.56 × 10-7 A/cm2). Furthermore, the common-emitter breakdown voltage of the studied device is higher than 2 V. Consequently, the studied device shows a promise for low supply voltage, and low-power consumption circuit applications.

Original languageEnglish
Pages (from-to)126-128
Number of pages3
JournalIEEE Electron Device Letters
Issue number3
Publication statusPublished - 2003 Mar

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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