A novel junctionless FinFET structure with sub-5nm shell doping profile by molecular monolayer doping and microwave annealing

Y. J. Lee, T. C. Cho, Kuo-Hsing Kao, P. J. Sung, F. K. Hsueh, P. C. Huang, C. T. Wu, S. H. Hsu, W. H. Huang, H. C. Chen, Y. Li, M. I. Current, B. Hengstebeck, J. Marino, T. Büyüklimanli, J. M. Shieh, T. S. Chao, W. F. Wu, W. K. Yeh

Research output: Contribution to journalConference article

18 Citations (Scopus)

Abstract

For the first time, a novel junctionless (JL) FinFET structure with a shell doping profile (SDP) formed by molecular monolayer doping (MLD) method and microwave annealing (MWA) at low temperature is proposed and studied. Thanks to the ultra thin SDP leading to an easily-depleted channel, the proposed JLFinFET can retain the ideal subthreshold swing (∼ 60 mV/dec) at a high doping level according to simulations. Poly Si based JLFinFETs processed with MLD and MWA exhibit superior subthreshold swing (S.S. ∼ 67mV/dec) and excellent on-off ratio (>106) for both n and p channel devices. Threshold voltage (VTH) variation due to random dopant fluctuation (RDF) is reduced in MLD-JLFinFETs, which can be attributed to the molecule self-limiting property of MLD on the Si surface and quasi-diffusionless MWA at low temperature. Our results reveal the potential of the proposed SDP enabling a JLFET showing reduced variation and outstanding performance for low power applications.

Original languageEnglish
Article number7047158
Pages (from-to)32.7.1-32.7.4
JournalTechnical Digest - International Electron Devices Meeting, IEDM
Volume2015-February
Issue numberFebruary
DOIs
Publication statusPublished - 2015 Feb 20
Event2014 60th IEEE International Electron Devices Meeting, IEDM 2014 - San Francisco, United States
Duration: 2014 Dec 152014 Dec 17

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Monolayers
Microwaves
Doping (additives)
Annealing
microwaves
annealing
profiles
FinFET
threshold voltage
Threshold voltage
Polysilicon
Temperature
Molecules
molecules
simulation

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Lee, Y. J. ; Cho, T. C. ; Kao, Kuo-Hsing ; Sung, P. J. ; Hsueh, F. K. ; Huang, P. C. ; Wu, C. T. ; Hsu, S. H. ; Huang, W. H. ; Chen, H. C. ; Li, Y. ; Current, M. I. ; Hengstebeck, B. ; Marino, J. ; Büyüklimanli, T. ; Shieh, J. M. ; Chao, T. S. ; Wu, W. F. ; Yeh, W. K. / A novel junctionless FinFET structure with sub-5nm shell doping profile by molecular monolayer doping and microwave annealing. In: Technical Digest - International Electron Devices Meeting, IEDM. 2015 ; Vol. 2015-February, No. February. pp. 32.7.1-32.7.4.
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abstract = "For the first time, a novel junctionless (JL) FinFET structure with a shell doping profile (SDP) formed by molecular monolayer doping (MLD) method and microwave annealing (MWA) at low temperature is proposed and studied. Thanks to the ultra thin SDP leading to an easily-depleted channel, the proposed JLFinFET can retain the ideal subthreshold swing (∼ 60 mV/dec) at a high doping level according to simulations. Poly Si based JLFinFETs processed with MLD and MWA exhibit superior subthreshold swing (S.S. ∼ 67mV/dec) and excellent on-off ratio (>106) for both n and p channel devices. Threshold voltage (VTH) variation due to random dopant fluctuation (RDF) is reduced in MLD-JLFinFETs, which can be attributed to the molecule self-limiting property of MLD on the Si surface and quasi-diffusionless MWA at low temperature. Our results reveal the potential of the proposed SDP enabling a JLFET showing reduced variation and outstanding performance for low power applications.",
author = "Lee, {Y. J.} and Cho, {T. C.} and Kuo-Hsing Kao and Sung, {P. J.} and Hsueh, {F. K.} and Huang, {P. C.} and Wu, {C. T.} and Hsu, {S. H.} and Huang, {W. H.} and Chen, {H. C.} and Y. Li and Current, {M. I.} and B. Hengstebeck and J. Marino and T. B{\"u}y{\"u}klimanli and Shieh, {J. M.} and Chao, {T. S.} and Wu, {W. F.} and Yeh, {W. K.}",
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Lee, YJ, Cho, TC, Kao, K-H, Sung, PJ, Hsueh, FK, Huang, PC, Wu, CT, Hsu, SH, Huang, WH, Chen, HC, Li, Y, Current, MI, Hengstebeck, B, Marino, J, Büyüklimanli, T, Shieh, JM, Chao, TS, Wu, WF & Yeh, WK 2015, 'A novel junctionless FinFET structure with sub-5nm shell doping profile by molecular monolayer doping and microwave annealing', Technical Digest - International Electron Devices Meeting, IEDM, vol. 2015-February, no. February, 7047158, pp. 32.7.1-32.7.4. https://doi.org/10.1109/IEDM.2014.7047158

A novel junctionless FinFET structure with sub-5nm shell doping profile by molecular monolayer doping and microwave annealing. / Lee, Y. J.; Cho, T. C.; Kao, Kuo-Hsing; Sung, P. J.; Hsueh, F. K.; Huang, P. C.; Wu, C. T.; Hsu, S. H.; Huang, W. H.; Chen, H. C.; Li, Y.; Current, M. I.; Hengstebeck, B.; Marino, J.; Büyüklimanli, T.; Shieh, J. M.; Chao, T. S.; Wu, W. F.; Yeh, W. K.

In: Technical Digest - International Electron Devices Meeting, IEDM, Vol. 2015-February, No. February, 7047158, 20.02.2015, p. 32.7.1-32.7.4.

Research output: Contribution to journalConference article

TY - JOUR

T1 - A novel junctionless FinFET structure with sub-5nm shell doping profile by molecular monolayer doping and microwave annealing

AU - Lee, Y. J.

AU - Cho, T. C.

AU - Kao, Kuo-Hsing

AU - Sung, P. J.

AU - Hsueh, F. K.

AU - Huang, P. C.

AU - Wu, C. T.

AU - Hsu, S. H.

AU - Huang, W. H.

AU - Chen, H. C.

AU - Li, Y.

AU - Current, M. I.

AU - Hengstebeck, B.

AU - Marino, J.

AU - Büyüklimanli, T.

AU - Shieh, J. M.

AU - Chao, T. S.

AU - Wu, W. F.

AU - Yeh, W. K.

PY - 2015/2/20

Y1 - 2015/2/20

N2 - For the first time, a novel junctionless (JL) FinFET structure with a shell doping profile (SDP) formed by molecular monolayer doping (MLD) method and microwave annealing (MWA) at low temperature is proposed and studied. Thanks to the ultra thin SDP leading to an easily-depleted channel, the proposed JLFinFET can retain the ideal subthreshold swing (∼ 60 mV/dec) at a high doping level according to simulations. Poly Si based JLFinFETs processed with MLD and MWA exhibit superior subthreshold swing (S.S. ∼ 67mV/dec) and excellent on-off ratio (>106) for both n and p channel devices. Threshold voltage (VTH) variation due to random dopant fluctuation (RDF) is reduced in MLD-JLFinFETs, which can be attributed to the molecule self-limiting property of MLD on the Si surface and quasi-diffusionless MWA at low temperature. Our results reveal the potential of the proposed SDP enabling a JLFET showing reduced variation and outstanding performance for low power applications.

AB - For the first time, a novel junctionless (JL) FinFET structure with a shell doping profile (SDP) formed by molecular monolayer doping (MLD) method and microwave annealing (MWA) at low temperature is proposed and studied. Thanks to the ultra thin SDP leading to an easily-depleted channel, the proposed JLFinFET can retain the ideal subthreshold swing (∼ 60 mV/dec) at a high doping level according to simulations. Poly Si based JLFinFETs processed with MLD and MWA exhibit superior subthreshold swing (S.S. ∼ 67mV/dec) and excellent on-off ratio (>106) for both n and p channel devices. Threshold voltage (VTH) variation due to random dopant fluctuation (RDF) is reduced in MLD-JLFinFETs, which can be attributed to the molecule self-limiting property of MLD on the Si surface and quasi-diffusionless MWA at low temperature. Our results reveal the potential of the proposed SDP enabling a JLFET showing reduced variation and outstanding performance for low power applications.

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U2 - 10.1109/IEDM.2014.7047158

DO - 10.1109/IEDM.2014.7047158

M3 - Conference article

VL - 2015-February

SP - 32.7.1-32.7.4

JO - Technical Digest - International Electron Devices Meeting

JF - Technical Digest - International Electron Devices Meeting

SN - 0163-1918

IS - February

M1 - 7047158

ER -