A novel low-cost Horizontal Current Bipolar Transistor (HCBT) with the reduced parasitics

Tomislav Suligoj; Petar Biljanovic; Johnny K.O. Sin; Kang L. Wang

A novel low-cost Horizontal Current Bipolar Transistor (HCBT) with the reduced parasitics

Tomislav Suligoj, Petar Biljanovic, Johnny K.O. Sin, Kang L. Wang

College of Electrical Engineering and Computer Science

Research output: Contribution to journal › Conference article › peer-review

5 Citations (Scopus)

Abstract

A novel Horizontal Current Bipolar Transistor (HCBT) structure, suitable for the integration with pillar-like MOSFETs is presented. HCBT is processed by a low-cost technology in the (111) sidewalk on the (110) wafers, with the minimized volume of the extrinsic regions, resulting in the reduced parasitics. The HCBT structure exhibits the highest f_T (30.4 GHz) and f _TBV_CEO product (127.7 GHzV) among the lateral bipolar transistors.

Original language	English
Pages (from-to)	36-39
Number of pages	4
Journal	Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting
Publication status	Published - 2004
Event	Proceedings of the 2004 IEEE Bipolar/BiCMOS Circuits and Technology Meeting - Montreal, Que., Canada Duration: 2004 Sept 13 → 2004 Sept 14

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

Cite this

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title = "A novel low-cost Horizontal Current Bipolar Transistor (HCBT) with the reduced parasitics",

abstract = "A novel Horizontal Current Bipolar Transistor (HCBT) structure, suitable for the integration with pillar-like MOSFETs is presented. HCBT is processed by a low-cost technology in the (111) sidewalk on the (110) wafers, with the minimized volume of the extrinsic regions, resulting in the reduced parasitics. The HCBT structure exhibits the highest fT (30.4 GHz) and f TBVCEO product (127.7 GHzV) among the lateral bipolar transistors.",

author = "Tomislav Suligoj and Petar Biljanovic and Sin, {Johnny K.O.} and Wang, {Kang L.}",

year = "2004",

language = "English",

pages = "36--39",

journal = "Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting",

issn = "1088-9299",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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T1 - A novel low-cost Horizontal Current Bipolar Transistor (HCBT) with the reduced parasitics

AU - Suligoj, Tomislav

AU - Biljanovic, Petar

AU - Sin, Johnny K.O.

AU - Wang, Kang L.

PY - 2004

Y1 - 2004

N2 - A novel Horizontal Current Bipolar Transistor (HCBT) structure, suitable for the integration with pillar-like MOSFETs is presented. HCBT is processed by a low-cost technology in the (111) sidewalk on the (110) wafers, with the minimized volume of the extrinsic regions, resulting in the reduced parasitics. The HCBT structure exhibits the highest fT (30.4 GHz) and f TBVCEO product (127.7 GHzV) among the lateral bipolar transistors.

AB - A novel Horizontal Current Bipolar Transistor (HCBT) structure, suitable for the integration with pillar-like MOSFETs is presented. HCBT is processed by a low-cost technology in the (111) sidewalk on the (110) wafers, with the minimized volume of the extrinsic regions, resulting in the reduced parasitics. The HCBT structure exhibits the highest fT (30.4 GHz) and f TBVCEO product (127.7 GHzV) among the lateral bipolar transistors.

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M3 - Conference article

AN - SCOPUS:15544362319

SN - 1088-9299

SP - 36

EP - 39

JO - Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting

JF - Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting

T2 - Proceedings of the 2004 IEEE Bipolar/BiCMOS Circuits and Technology Meeting

Y2 - 13 September 2004 through 14 September 2004

ER -

A novel low-cost Horizontal Current Bipolar Transistor (HCBT) with the reduced parasitics

Abstract

All Science Journal Classification (ASJC) codes

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