A novel Horizontal Current Bipolar Transistor (HCBT) structure, suitable for the integration with pillar-like MOSFETs is presented. HCBT is processed by a low-cost technology in the (111) sidewalk on the (110) wafers, with the minimized volume of the extrinsic regions, resulting in the reduced parasitics. The HCBT structure exhibits the highest fT (30.4 GHz) and f TBVCEO product (127.7 GHzV) among the lateral bipolar transistors.
|Number of pages||4|
|Journal||Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting|
|Publication status||Published - 2004|
|Event||Proceedings of the 2004 IEEE Bipolar/BiCMOS Circuits and Technology Meeting - Montreal, Que., Canada|
Duration: 2004 Sep 13 → 2004 Sep 14
All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering