A novel low-cost Horizontal Current Bipolar Transistor (HCBT) with the reduced parasitics

Tomislav Suligoj, Petar Biljanovic, Johnny K.O. Sin, Kang L. Wang

Research output: Contribution to journalConference articlepeer-review

5 Citations (Scopus)

Abstract

A novel Horizontal Current Bipolar Transistor (HCBT) structure, suitable for the integration with pillar-like MOSFETs is presented. HCBT is processed by a low-cost technology in the (111) sidewalk on the (110) wafers, with the minimized volume of the extrinsic regions, resulting in the reduced parasitics. The HCBT structure exhibits the highest fT (30.4 GHz) and f TBVCEO product (127.7 GHzV) among the lateral bipolar transistors.

Original languageEnglish
Pages (from-to)36-39
Number of pages4
JournalProceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting
Publication statusPublished - 2004
EventProceedings of the 2004 IEEE Bipolar/BiCMOS Circuits and Technology Meeting - Montreal, Que., Canada
Duration: 2004 Sep 132004 Sep 14

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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