A novel method to realize InGaN self-assembled quantum dots by metalorganic chemical vapor deposition

Liang Wen Ji; Yan Kuin Su; Shoou Jinn Chang; Liang Wen Wu; Te Hua Fang; Qi Kun Xue; Wei Chi Lai; Yu Zung Chiou

doi:10.1016/S0167-577X(03)00293-3

A novel method to realize InGaN self-assembled quantum dots by metalorganic chemical vapor deposition

Liang Wen Ji, Yan Kuin Su, Shoou Jinn Chang, Liang Wen Wu, Te Hua Fang, Qi Kun Xue, Wei Chi Lai, Yu Zung Chiou

Research output: Contribution to journal › Article › peer-review

33 Citations (Scopus)

Abstract

We report the use of an interrupted growth method in metalorganic chemical vapor deposition (MOCVD) to control the growth of InGaN layers and to grow nanoscale InGaN self-assembled quantum dots (QDs). With a 12-s growth interrupt, we successfully formed InGaN QDs with a typical lateral size of 25 nm and an average height of 4.1 nm. The QDs density is about 2 × 1010 cm ^-2. Strong photoluminescence (PL) emission of InGaN nanostructure was observed at a room temperature with a full-width-half-maximum (FWHM) of about 92 meV. These results suggest that such QDs are potentially useful in nitride-based optoelectronic devices.

Original language	English
Pages (from-to)	4218-4221
Number of pages	4
Journal	Materials Letters
Volume	57
Issue number	26-27
DOIs	https://doi.org/10.1016/S0167-577X(03)00293-3
Publication status	Published - 2003 Sept

All Science Journal Classification (ASJC) codes

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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10.1016/S0167-577X(03)00293-3

Cite this

@article{60221c2e81424d01a2f4fb56c91cb46c,

title = "A novel method to realize InGaN self-assembled quantum dots by metalorganic chemical vapor deposition",

abstract = "We report the use of an interrupted growth method in metalorganic chemical vapor deposition (MOCVD) to control the growth of InGaN layers and to grow nanoscale InGaN self-assembled quantum dots (QDs). With a 12-s growth interrupt, we successfully formed InGaN QDs with a typical lateral size of 25 nm and an average height of 4.1 nm. The QDs density is about 2 × 1010 cm -2. Strong photoluminescence (PL) emission of InGaN nanostructure was observed at a room temperature with a full-width-half-maximum (FWHM) of about 92 meV. These results suggest that such QDs are potentially useful in nitride-based optoelectronic devices.",

author = "Ji, {Liang Wen} and Su, {Yan Kuin} and Chang, {Shoou Jinn} and Wu, {Liang Wen} and Fang, {Te Hua} and Xue, {Qi Kun} and Lai, {Wei Chi} and Chiou, {Yu Zung}",

note = "Funding Information: This work was financially supported by the National Science Council of Taiwan (Project No. NSC 90-2215-E-006-024).",

year = "2003",

month = sep,

doi = "10.1016/S0167-577X(03)00293-3",

language = "English",

volume = "57",

pages = "4218--4221",

journal = "Materials Letters",

issn = "0167-577X",

publisher = "Elsevier",

number = "26-27",

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TY - JOUR

T1 - A novel method to realize InGaN self-assembled quantum dots by metalorganic chemical vapor deposition

AU - Ji, Liang Wen

AU - Su, Yan Kuin

AU - Chang, Shoou Jinn

AU - Wu, Liang Wen

AU - Fang, Te Hua

AU - Xue, Qi Kun

AU - Lai, Wei Chi

AU - Chiou, Yu Zung

N1 - Funding Information: This work was financially supported by the National Science Council of Taiwan (Project No. NSC 90-2215-E-006-024).

PY - 2003/9

Y1 - 2003/9

N2 - We report the use of an interrupted growth method in metalorganic chemical vapor deposition (MOCVD) to control the growth of InGaN layers and to grow nanoscale InGaN self-assembled quantum dots (QDs). With a 12-s growth interrupt, we successfully formed InGaN QDs with a typical lateral size of 25 nm and an average height of 4.1 nm. The QDs density is about 2 × 1010 cm -2. Strong photoluminescence (PL) emission of InGaN nanostructure was observed at a room temperature with a full-width-half-maximum (FWHM) of about 92 meV. These results suggest that such QDs are potentially useful in nitride-based optoelectronic devices.

AB - We report the use of an interrupted growth method in metalorganic chemical vapor deposition (MOCVD) to control the growth of InGaN layers and to grow nanoscale InGaN self-assembled quantum dots (QDs). With a 12-s growth interrupt, we successfully formed InGaN QDs with a typical lateral size of 25 nm and an average height of 4.1 nm. The QDs density is about 2 × 1010 cm -2. Strong photoluminescence (PL) emission of InGaN nanostructure was observed at a room temperature with a full-width-half-maximum (FWHM) of about 92 meV. These results suggest that such QDs are potentially useful in nitride-based optoelectronic devices.

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U2 - 10.1016/S0167-577X(03)00293-3

DO - 10.1016/S0167-577X(03)00293-3

M3 - Article

AN - SCOPUS:0041728694

SN - 0167-577X

VL - 57

SP - 4218

EP - 4221

JO - Materials Letters

JF - Materials Letters

IS - 26-27

ER -

A novel method to realize InGaN self-assembled quantum dots by metalorganic chemical vapor deposition

Abstract

All Science Journal Classification (ASJC) codes

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