TY - JOUR
T1 - A novel microwave microstrip surface acoustic wave filter with gigahertz band low-loss wide bandwidth for broad spectrum communication system
AU - Tang, I. Tseng
AU - Jenq, Fenq Lin
AU - Horng, Jui Hong
AU - Houng, Mau Phon
AU - Wang, Yeong Her
PY - 2002/5
Y1 - 2002/5
N2 - A novel GHz-band low-loss wide bandwidth microwave microstrip, surface acoustic wave (SAW) filter used for the spread spectrum communication system has been designed and fabricated. The 16-μm-input/output-interdigital-transducer (IDT) LiNbO3 61.00-MHz-SAW filter with microwave square open-loop resonators has an insertion loss of 3.987 dB. This device is also a 1 GHz microwave microstrip SAW filter with four coupled microstrip square open-loop resonators and two planar interdigital capacitors with S21 and S11, having bandwidths of -2.962 dB and -25.497 dB, respectively, and 800 MHz. It is speculated that the characteristics of these low-loss wide bandwidth (BW = 80%) microstrip SAW filters are influenced by the interaction between electromagnetic wave and piezoelectric SAW. To confirm this speculation, devices with the same design have been fabricated on 128°-rotated YX-cut LiNbO3, GaAs S-I and 9000 Å SiO2/Si substrates. Significant variations of performance are observed among these devices.
AB - A novel GHz-band low-loss wide bandwidth microwave microstrip, surface acoustic wave (SAW) filter used for the spread spectrum communication system has been designed and fabricated. The 16-μm-input/output-interdigital-transducer (IDT) LiNbO3 61.00-MHz-SAW filter with microwave square open-loop resonators has an insertion loss of 3.987 dB. This device is also a 1 GHz microwave microstrip SAW filter with four coupled microstrip square open-loop resonators and two planar interdigital capacitors with S21 and S11, having bandwidths of -2.962 dB and -25.497 dB, respectively, and 800 MHz. It is speculated that the characteristics of these low-loss wide bandwidth (BW = 80%) microstrip SAW filters are influenced by the interaction between electromagnetic wave and piezoelectric SAW. To confirm this speculation, devices with the same design have been fabricated on 128°-rotated YX-cut LiNbO3, GaAs S-I and 9000 Å SiO2/Si substrates. Significant variations of performance are observed among these devices.
UR - http://www.scopus.com/inward/record.url?scp=0036578361&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0036578361&partnerID=8YFLogxK
U2 - 10.1143/jjap.41.2974
DO - 10.1143/jjap.41.2974
M3 - Article
AN - SCOPUS:0036578361
SN - 0021-4922
VL - 41
SP - 2974
EP - 2977
JO - Japanese Journal of Applied Physics
JF - Japanese Journal of Applied Physics
IS - 5 A
ER -