A novel multi - nitridation ONO interpoly dielectric (MN-ONO) for highly reliable and high performance NAND flash memory

C. H. Liu; Y. M. Lin; Y. Sakamoto; R. J. Yang; D. Y. Yin; P. J. Chiang; H. C. Wei; C. Y. Ho; S. H. Chen; H. P. Hwang; C. H. Hung; S. Pittikoun; S. Aritome

doi:10.1109/VTSA.2009.5159280

A novel multi - nitridation ONO interpoly dielectric (MN-ONO) for highly reliable and high performance NAND flash memory

C. H. Liu, Y. M. Lin, Y. Sakamoto, R. J. Yang, D. Y. Yin, P. J. Chiang, H. C. Wei, C. Y. Ho, S. H. Chen, H. P. Hwang, C. H. Hung, S. Pittikoun, S. Aritome

Department of Mechanical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

3 Citations (Scopus)

Abstract

Multi-Nitridation ONO has been demonstrated for the first time. Significant improvement are obtained in NAND Flash performance and reliability. (1) 1V program voltage reduction owing to 10A EOT (equivalant oxide thickness ) reduction (2) More than 20% tighter cell Vt distribution width can be achieved from ONO bird's beak free due to supressing encroachment of gate re-oxidation by Floating Gate (FG) / top oxide nitridation. And also, (3) good data retention can be realized by applying plasma oxidation on bottom oxide to suppress the trap assisted charge loss. MN-ONO is a promising technology for high density NAND Flash beyond 40nm generation.

Original language	English
Title of host publication	2009 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA '09
Pages	35-36
Number of pages	2
DOIs	https://doi.org/10.1109/VTSA.2009.5159280
Publication status	Published - 2009
Event	2009 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA '09 - Hsinchu, Taiwan Duration: 2009 Apr 27 → 2009 Apr 29

Publication series

Name	International Symposium on VLSI Technology, Systems, and Applications, Proceedings

Conference

Conference	2009 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA '09
Country/Territory	Taiwan
City	Hsinchu
Period	09-04-27 → 09-04-29

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

Access to Document

10.1109/VTSA.2009.5159280

Cite this

Liu, C. H., Lin, Y. M., Sakamoto, Y., Yang, R. J., Yin, D. Y., Chiang, P. J., Wei, H. C., Ho, C. Y., Chen, S. H., Hwang, H. P., Hung, C. H., Pittikoun, S., & Aritome, S. (2009). A novel multi - nitridation ONO interpoly dielectric (MN-ONO) for highly reliable and high performance NAND flash memory. In 2009 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA '09 (pp. 35-36). Article 5159280 (International Symposium on VLSI Technology, Systems, and Applications, Proceedings). https://doi.org/10.1109/VTSA.2009.5159280

@inproceedings{c7e9a9ab6df34bbeb57ee3e6a435d1c5,

title = "A novel multi - nitridation ONO interpoly dielectric (MN-ONO) for highly reliable and high performance NAND flash memory",

abstract = "Multi-Nitridation ONO has been demonstrated for the first time. Significant improvement are obtained in NAND Flash performance and reliability. (1) 1V program voltage reduction owing to 10A EOT (equivalant oxide thickness ) reduction (2) More than 20% tighter cell Vt distribution width can be achieved from ONO bird's beak free due to supressing encroachment of gate re-oxidation by Floating Gate (FG) / top oxide nitridation. And also, (3) good data retention can be realized by applying plasma oxidation on bottom oxide to suppress the trap assisted charge loss. MN-ONO is a promising technology for high density NAND Flash beyond 40nm generation.",

author = "Liu, {C. H.} and Lin, {Y. M.} and Y. Sakamoto and Yang, {R. J.} and Yin, {D. Y.} and Chiang, {P. J.} and Wei, {H. C.} and Ho, {C. Y.} and Chen, {S. H.} and Hwang, {H. P.} and Hung, {C. H.} and S. Pittikoun and S. Aritome",

year = "2009",

doi = "10.1109/VTSA.2009.5159280",

language = "English",

isbn = "9781424427857",

series = "International Symposium on VLSI Technology, Systems, and Applications, Proceedings",

pages = "35--36",

booktitle = "2009 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA '09",

note = "2009 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA '09 ; Conference date: 27-04-2009 Through 29-04-2009",

}

Liu, CH, Lin, YM, Sakamoto, Y, Yang, RJ, Yin, DY, Chiang, PJ, Wei, HC, Ho, CY, Chen, SH, Hwang, HP, Hung, CH, Pittikoun, S & Aritome, S 2009, A novel multi - nitridation ONO interpoly dielectric (MN-ONO) for highly reliable and high performance NAND flash memory. in 2009 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA '09., 5159280, International Symposium on VLSI Technology, Systems, and Applications, Proceedings, pp. 35-36, 2009 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA '09, Hsinchu, Taiwan, 09-04-27. https://doi.org/10.1109/VTSA.2009.5159280

A novel multi - nitridation ONO interpoly dielectric (MN-ONO) for highly reliable and high performance NAND flash memory. / Liu, C. H.; Lin, Y. M.; Sakamoto, Y. et al.
2009 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA '09. 2009. p. 35-36 5159280 (International Symposium on VLSI Technology, Systems, and Applications, Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - A novel multi - nitridation ONO interpoly dielectric (MN-ONO) for highly reliable and high performance NAND flash memory

AU - Liu, C. H.

AU - Lin, Y. M.

AU - Sakamoto, Y.

AU - Yang, R. J.

AU - Yin, D. Y.

AU - Chiang, P. J.

AU - Wei, H. C.

AU - Ho, C. Y.

AU - Chen, S. H.

AU - Hwang, H. P.

AU - Hung, C. H.

AU - Pittikoun, S.

AU - Aritome, S.

PY - 2009

Y1 - 2009

N2 - Multi-Nitridation ONO has been demonstrated for the first time. Significant improvement are obtained in NAND Flash performance and reliability. (1) 1V program voltage reduction owing to 10A EOT (equivalant oxide thickness ) reduction (2) More than 20% tighter cell Vt distribution width can be achieved from ONO bird's beak free due to supressing encroachment of gate re-oxidation by Floating Gate (FG) / top oxide nitridation. And also, (3) good data retention can be realized by applying plasma oxidation on bottom oxide to suppress the trap assisted charge loss. MN-ONO is a promising technology for high density NAND Flash beyond 40nm generation.

AB - Multi-Nitridation ONO has been demonstrated for the first time. Significant improvement are obtained in NAND Flash performance and reliability. (1) 1V program voltage reduction owing to 10A EOT (equivalant oxide thickness ) reduction (2) More than 20% tighter cell Vt distribution width can be achieved from ONO bird's beak free due to supressing encroachment of gate re-oxidation by Floating Gate (FG) / top oxide nitridation. And also, (3) good data retention can be realized by applying plasma oxidation on bottom oxide to suppress the trap assisted charge loss. MN-ONO is a promising technology for high density NAND Flash beyond 40nm generation.

UR - http://www.scopus.com/inward/record.url?scp=77950102530&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77950102530&partnerID=8YFLogxK

U2 - 10.1109/VTSA.2009.5159280

DO - 10.1109/VTSA.2009.5159280

M3 - Conference contribution

AN - SCOPUS:77950102530

SN - 9781424427857

T3 - International Symposium on VLSI Technology, Systems, and Applications, Proceedings

SP - 35

EP - 36

BT - 2009 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA '09

T2 - 2009 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA '09

Y2 - 27 April 2009 through 29 April 2009

ER -

Liu CH, Lin YM, Sakamoto Y, Yang RJ, Yin DY, Chiang PJ et al. A novel multi - nitridation ONO interpoly dielectric (MN-ONO) for highly reliable and high performance NAND flash memory. In 2009 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA '09. 2009. p. 35-36. 5159280. (International Symposium on VLSI Technology, Systems, and Applications, Proceedings). doi: 10.1109/VTSA.2009.5159280

A novel multi - nitridation ONO interpoly dielectric (MN-ONO) for highly reliable and high performance NAND flash memory

Abstract

Publication series

Conference

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this