A novel multi - nitridation ONO interpoly dielectric (MN-ONO) for highly reliable and high performance NAND flash memory

C. H. Liu, Y. M. Lin, Y. Sakamoto, R. J. Yang, D. Y. Yin, P. J. Chiang, H. C. Wei, C. Y. Ho, S. H. Chen, H. P. Hwang, C. H. Hung, S. Pittikoun, S. Aritome

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

Multi-Nitridation ONO has been demonstrated for the first time. Significant improvement are obtained in NAND Flash performance and reliability. (1) 1V program voltage reduction owing to 10A EOT (equivalant oxide thickness ) reduction (2) More than 20% tighter cell Vt distribution width can be achieved from ONO bird's beak free due to supressing encroachment of gate re-oxidation by Floating Gate (FG) / top oxide nitridation. And also, (3) good data retention can be realized by applying plasma oxidation on bottom oxide to suppress the trap assisted charge loss. MN-ONO is a promising technology for high density NAND Flash beyond 40nm generation.

Original languageEnglish
Title of host publication2009 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA '09
Pages35-36
Number of pages2
DOIs
Publication statusPublished - 2009 Dec 1
Event2009 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA '09 - Hsinchu, Taiwan
Duration: 2009 Apr 272009 Apr 29

Publication series

NameInternational Symposium on VLSI Technology, Systems, and Applications, Proceedings

Conference

Conference2009 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA '09
CountryTaiwan
CityHsinchu
Period09-04-2709-04-29

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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