A novel Pd/oxide/GaAs metal-insulator-semiconductor field-effect transistor (MISFET) hydrogen sensor

Kun Wei Lin, Chin Chuan Cheng, Shiou Ying Cheng, Kuo Hui Yu, Chih Kai Wang, Hung Ming Chuang, Jing Yuh Chen, Cheng Zu Wu, Wen-Chau Liu

Research output: Contribution to journalArticlepeer-review

26 Citations (Scopus)


A novel and high-performance Pd/oxide/GaAs hydrogen sensor based on a metal-insulator-semiconductor field-effect transistor (MISFET) is fabricated and studied. In the presence of the interfacial oxide, high sensitivity and significant increase in output drain current are observed. In the presence of hydrogen, a 2 × 200 μm2 gate dimension device shows good dc characteristics including high turn-on voltage, an obvious variation of drain current and a short response time. In addition, under the applied voltage of -4 V and 537 ppm hydrogen in air, a very high sensitivity of 9473 is obtained. This performance shows that the device studied has a good potential for high-speed and high-sensitivity hydrogen sensor and MISFET integrated circuit applications.

Original languageEnglish
Pages (from-to)997-1001
Number of pages5
JournalSemiconductor Science and Technology
Issue number12
Publication statusPublished - 2001 Dec 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry


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