A novel and high-performance Pd/oxide/GaAs hydrogen sensor based on a metal-insulator-semiconductor field-effect transistor (MISFET) is fabricated and studied. In the presence of the interfacial oxide, high sensitivity and significant increase in output drain current are observed. In the presence of hydrogen, a 2 × 200 μm2 gate dimension device shows good dc characteristics including high turn-on voltage, an obvious variation of drain current and a short response time. In addition, under the applied voltage of -4 V and 537 ppm hydrogen in air, a very high sensitivity of 9473 is obtained. This performance shows that the device studied has a good potential for high-speed and high-sensitivity hydrogen sensor and MISFET integrated circuit applications.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry