The objective of this study is to solve the difficulties encountered during planarization and etching of a poly silicon film that is deposited and used as a sacrificial layer in an oxide structure in a micro-thermal system such as a micro-channel device as mentioned in the previous paper. This polysilicon film has a relatively wide and deep ditch. Two different chemical-mechanical-polishing (CMP) processes that have been used to flatten the polysilicon-made sacrificial layer will be presented and the results are not very successful. A novel planarization technique using wet etch process is developed which has been shown to be able to flatten very effectively a surface with wide and deep ditch.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Surfaces, Coatings and Films
- Metals and Alloys
- Electrical and Electronic Engineering