A novel planarization process for polysilicon sacrificial layers in a micro-thermal system

H. R. Chen, C. Gau, B. T. Dai, M. S. Tsai

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)

Abstract

The objective of this study is to solve the difficulties encountered during planarization and etching of a poly silicon film that is deposited and used as a sacrificial layer in an oxide structure in a micro-thermal system such as a micro-channel device as mentioned in the previous paper. This polysilicon film has a relatively wide and deep ditch. Two different chemical-mechanical-polishing (CMP) processes that have been used to flatten the polysilicon-made sacrificial layer will be presented and the results are not very successful. A novel planarization technique using wet etch process is developed which has been shown to be able to flatten very effectively a surface with wide and deep ditch.

Original languageEnglish
Pages (from-to)86-90
Number of pages5
JournalSensors and Actuators, A: Physical
Volume108
Issue number1-3
DOIs
Publication statusPublished - 2003 Nov 15

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Electrical and Electronic Engineering

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