A novel planarization process for polysilicon sacrificial layers in a micro-thermal system

H. R. Chen; C. Gau; B. T. Dai; M. S. Tsai

doi:10.1016/j.sna.2003.04.002

A novel planarization process for polysilicon sacrificial layers in a micro-thermal system

H. R. Chen, C. Gau, B. T. Dai, M. S. Tsai

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

The objective of this study is to solve the difficulties encountered during planarization and etching of a poly silicon film that is deposited and used as a sacrificial layer in an oxide structure in a micro-thermal system such as a micro-channel device as mentioned in the previous paper. This polysilicon film has a relatively wide and deep ditch. Two different chemical-mechanical-polishing (CMP) processes that have been used to flatten the polysilicon-made sacrificial layer will be presented and the results are not very successful. A novel planarization technique using wet etch process is developed which has been shown to be able to flatten very effectively a surface with wide and deep ditch.

Original language	English
Pages (from-to)	86-90
Number of pages	5
Journal	Sensors and Actuators, A: Physical
Volume	108
Issue number	1-3
DOIs	https://doi.org/10.1016/j.sna.2003.04.002
Publication status	Published - 2003 Nov 15

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Instrumentation
Condensed Matter Physics
Surfaces, Coatings and Films
Metals and Alloys
Electrical and Electronic Engineering

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10.1016/j.sna.2003.04.002

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title = "A novel planarization process for polysilicon sacrificial layers in a micro-thermal system",

abstract = "The objective of this study is to solve the difficulties encountered during planarization and etching of a poly silicon film that is deposited and used as a sacrificial layer in an oxide structure in a micro-thermal system such as a micro-channel device as mentioned in the previous paper. This polysilicon film has a relatively wide and deep ditch. Two different chemical-mechanical-polishing (CMP) processes that have been used to flatten the polysilicon-made sacrificial layer will be presented and the results are not very successful. A novel planarization technique using wet etch process is developed which has been shown to be able to flatten very effectively a surface with wide and deep ditch.",

author = "Chen, {H. R.} and C. Gau and Dai, {B. T.} and Tsai, {M. S.}",

note = "Funding Information: This research was sponsored by both the National Science of Council of Taiwan under contract no. NSC 88-2212-E-oo6-078 and National Nano Device Laboratory under contract no. NDL-88-C-022. ",

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doi = "10.1016/j.sna.2003.04.002",

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T1 - A novel planarization process for polysilicon sacrificial layers in a micro-thermal system

AU - Chen, H. R.

AU - Gau, C.

AU - Dai, B. T.

AU - Tsai, M. S.

N1 - Funding Information: This research was sponsored by both the National Science of Council of Taiwan under contract no. NSC 88-2212-E-oo6-078 and National Nano Device Laboratory under contract no. NDL-88-C-022.

PY - 2003/11/15

Y1 - 2003/11/15

N2 - The objective of this study is to solve the difficulties encountered during planarization and etching of a poly silicon film that is deposited and used as a sacrificial layer in an oxide structure in a micro-thermal system such as a micro-channel device as mentioned in the previous paper. This polysilicon film has a relatively wide and deep ditch. Two different chemical-mechanical-polishing (CMP) processes that have been used to flatten the polysilicon-made sacrificial layer will be presented and the results are not very successful. A novel planarization technique using wet etch process is developed which has been shown to be able to flatten very effectively a surface with wide and deep ditch.

AB - The objective of this study is to solve the difficulties encountered during planarization and etching of a poly silicon film that is deposited and used as a sacrificial layer in an oxide structure in a micro-thermal system such as a micro-channel device as mentioned in the previous paper. This polysilicon film has a relatively wide and deep ditch. Two different chemical-mechanical-polishing (CMP) processes that have been used to flatten the polysilicon-made sacrificial layer will be presented and the results are not very successful. A novel planarization technique using wet etch process is developed which has been shown to be able to flatten very effectively a surface with wide and deep ditch.

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JO - Sensors and Actuators, A: Physical

JF - Sensors and Actuators, A: Physical

IS - 1-3

ER -

A novel planarization process for polysilicon sacrificial layers in a micro-thermal system

Abstract

All Science Journal Classification (ASJC) codes

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