TY - JOUR
T1 - A Novel Pt/In0.52Al0.48 As Schottky idode-type hydrogen sensor
AU - Hung, C. W.Ching Wen
AU - Lin, Han Lien
AU - Chen, Huey Ing
AU - Tsai, Yan Ying
AU - Lai, Po Hsien
AU - Fu, Ssu I.
AU - Liu, Wen Chau
N1 - Funding Information:
Manuscript received June 27, 2006; revised September 20, 2006. This work was supported in part by the National Science Council, Taiwan, R.O.C., under Contract NSC-94-2215-E-006-060. The review of this letter was arranged by Editor J. del Alamo.
PY - 2006/12
Y1 - 2006/12
N2 - On the basis of a Pt/In0.52Al0.48As metal-semiconductor structure, a novel hydrogen sensor is fabricated and demonstrated. The studied Pt/In0.52Al0.48As Schottky diode-type hydrogen sensor exhibits significant sensing performance including high relative sensitivity ratio of about 2600% (under the 1% H2/air gas and VR =-0.5 V at 30 °C), large current variation of 310 μA (under the 1% H2 /air gas and VR=-5 V at 200 °C), widespread reverse-voltage regime (0 ∼ -5 V), stable hydrogen-sensing current-voltage (I-V) curves, and fast transient response time of 1.5 s. The calculated Schottky barrier-height change and series-resistance variation, from the thermionic-emission model and Norde method, are 87.0 meV and 288 Ω, respectively (under the 1% H2/air gas at 30 °C). The hydrogen concentrations and operating temperatures tested in this letter are in the range of 15 ppm-1% H2/air and 30 degC-250 °C, respectively. Based on the excellent integration compatibility with InP-based electronic devices, the studied device provides the potentiality in high-performance sensor-array applications.
AB - On the basis of a Pt/In0.52Al0.48As metal-semiconductor structure, a novel hydrogen sensor is fabricated and demonstrated. The studied Pt/In0.52Al0.48As Schottky diode-type hydrogen sensor exhibits significant sensing performance including high relative sensitivity ratio of about 2600% (under the 1% H2/air gas and VR =-0.5 V at 30 °C), large current variation of 310 μA (under the 1% H2 /air gas and VR=-5 V at 200 °C), widespread reverse-voltage regime (0 ∼ -5 V), stable hydrogen-sensing current-voltage (I-V) curves, and fast transient response time of 1.5 s. The calculated Schottky barrier-height change and series-resistance variation, from the thermionic-emission model and Norde method, are 87.0 meV and 288 Ω, respectively (under the 1% H2/air gas at 30 °C). The hydrogen concentrations and operating temperatures tested in this letter are in the range of 15 ppm-1% H2/air and 30 degC-250 °C, respectively. Based on the excellent integration compatibility with InP-based electronic devices, the studied device provides the potentiality in high-performance sensor-array applications.
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U2 - 10.1109/LED.2006.886313
DO - 10.1109/LED.2006.886313
M3 - Article
AN - SCOPUS:33947278244
SN - 0741-3106
VL - 27
SP - 951
EP - 954
JO - IEEE Electron Device Letters
JF - IEEE Electron Device Letters
IS - 12
ER -