A Novel Pt/In0.52Al0.48 As Schottky idode-type hydrogen sensor

C. W.Ching Wen Hung, Han Lien Lin, Huey-Ing Chen, Yan Ying Tsai, Po Hsien Lai, Ssu I. Fu, Wen-Chau Liu

Research output: Contribution to journalArticle

36 Citations (Scopus)

Abstract

On the basis of a Pt/In0.52Al0.48As metal-semiconductor structure, a novel hydrogen sensor is fabricated and demonstrated. The studied Pt/In0.52Al0.48As Schottky diode-type hydrogen sensor exhibits significant sensing performance including high relative sensitivity ratio of about 2600% (under the 1% H2/air gas and VR =-0.5 V at 30 °C), large current variation of 310 μA (under the 1% H2 /air gas and VR=-5 V at 200 °C), widespread reverse-voltage regime (0 ∼ -5 V), stable hydrogen-sensing current-voltage (I-V) curves, and fast transient response time of 1.5 s. The calculated Schottky barrier-height change and series-resistance variation, from the thermionic-emission model and Norde method, are 87.0 meV and 288 Ω, respectively (under the 1% H2/air gas at 30 °C). The hydrogen concentrations and operating temperatures tested in this letter are in the range of 15 ppm-1% H2/air and 30 degC-250 °C, respectively. Based on the excellent integration compatibility with InP-based electronic devices, the studied device provides the potentiality in high-performance sensor-array applications.

Original languageEnglish
Pages (from-to)951-954
Number of pages4
JournalIEEE Electron Device Letters
Volume27
Issue number12
DOIs
Publication statusPublished - 2006 Dec 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'A Novel Pt/In<sub>0.52</sub>Al<sub>0.48</sub> As Schottky idode-type hydrogen sensor'. Together they form a unique fingerprint.

Cite this