A novel three-terminal transistor-based Mach-Zehnder interferometric modulator on silicon-on-silicon (SOS) substrate

Mao Teng Hsu, Wen-Kuei Chuang, Shen Horng Chou, Yao Jen Lee

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We present a new three-terminal transistor, or the double-diode transistor (DDT) based Mach-Zehnder interferometric (MZI) modulator fabricated on silicon-on-silicon (SOS) substrate. The DDT structure is first analyzed in terms of a simplest ideal equivalent circuit, before DDT based MZI modulator, and measure the electronic and optical characteristics of DDT based Mach-Zehnder interference. In the end, we prove that the current pass thought our device will lead to thermal-optic effect not free carrier injection effect. This result can give a good explanation of that why the optical signal response times of SOS MZI modulators are 4∼ 5 orders slower than the response time of the I sd current.

Original languageEnglish
Title of host publicationTechnical Digest - 15th OptoElectronics and Communications Conference, OECC2010
Pages512-513
Number of pages2
Publication statusPublished - 2010 Nov 29
Event15th OptoElectronics and Communications Conference, OECC2010 - Sapporo, Japan
Duration: 2010 Jul 52010 Jul 9

Publication series

NameTechnical Digest - 15th OptoElectronics and Communications Conference, OECC2010

Other

Other15th OptoElectronics and Communications Conference, OECC2010
CountryJapan
CitySapporo
Period10-07-0510-07-09

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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