A novel three-terminal transistor-based Mach-Zehnder interferometric modulator on silicon-on-silicon (SOS) substrate

Mao Teng Hsu; Wen-Kuei Chuang; Shen Horng Chou; Yao Jen Lee

A novel three-terminal transistor-based Mach-Zehnder interferometric modulator on silicon-on-silicon (SOS) substrate

Mao Teng Hsu, Wen-Kuei Chuang, Shen Horng Chou, Yao Jen Lee

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We present a new three-terminal transistor, or the double-diode transistor (DDT) based Mach-Zehnder interferometric (MZI) modulator fabricated on silicon-on-silicon (SOS) substrate. The DDT structure is first analyzed in terms of a simplest ideal equivalent circuit, before DDT based MZI modulator, and measure the electronic and optical characteristics of DDT based Mach-Zehnder interference. In the end, we prove that the current pass thought our device will lead to thermal-optic effect not free carrier injection effect. This result can give a good explanation of that why the optical signal response times of SOS MZI modulators are 4∼ 5 orders slower than the response time of the I _sd current.

Original language	English
Title of host publication	Technical Digest - 15th OptoElectronics and Communications Conference, OECC2010
Pages	512-513
Number of pages	2
Publication status	Published - 2010 Nov 29
Event	15th OptoElectronics and Communications Conference, OECC2010 - Sapporo, Japan Duration: 2010 Jul 5 → 2010 Jul 9

Publication series

Name	Technical Digest - 15th OptoElectronics and Communications Conference, OECC2010

Other

Other	15th OptoElectronics and Communications Conference, OECC2010
Country/Territory	Japan
City	Sapporo
Period	10-07-05 → 10-07-09

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

Cite this

Hsu, M. T., Chuang, W.-K., Chou, S. H., & Lee, Y. J. (2010). A novel three-terminal transistor-based Mach-Zehnder interferometric modulator on silicon-on-silicon (SOS) substrate. In Technical Digest - 15th OptoElectronics and Communications Conference, OECC2010 (pp. 512-513). Article 5588509 (Technical Digest - 15th OptoElectronics and Communications Conference, OECC2010).

@inproceedings{cc232dc2ad174907bad79b00733ec10e,

title = "A novel three-terminal transistor-based Mach-Zehnder interferometric modulator on silicon-on-silicon (SOS) substrate",

abstract = "We present a new three-terminal transistor, or the double-diode transistor (DDT) based Mach-Zehnder interferometric (MZI) modulator fabricated on silicon-on-silicon (SOS) substrate. The DDT structure is first analyzed in terms of a simplest ideal equivalent circuit, before DDT based MZI modulator, and measure the electronic and optical characteristics of DDT based Mach-Zehnder interference. In the end, we prove that the current pass thought our device will lead to thermal-optic effect not free carrier injection effect. This result can give a good explanation of that why the optical signal response times of SOS MZI modulators are 4∼ 5 orders slower than the response time of the I sd current.",

author = "Hsu, {Mao Teng} and Wen-Kuei Chuang and Chou, {Shen Horng} and Lee, {Yao Jen}",

year = "2010",

month = nov,

day = "29",

language = "English",

isbn = "9784885522451",

series = "Technical Digest - 15th OptoElectronics and Communications Conference, OECC2010",

pages = "512--513",

booktitle = "Technical Digest - 15th OptoElectronics and Communications Conference, OECC2010",

note = "15th OptoElectronics and Communications Conference, OECC2010 ; Conference date: 05-07-2010 Through 09-07-2010",

}

Hsu, MT, Chuang, W-K, Chou, SH & Lee, YJ 2010, A novel three-terminal transistor-based Mach-Zehnder interferometric modulator on silicon-on-silicon (SOS) substrate. in Technical Digest - 15th OptoElectronics and Communications Conference, OECC2010., 5588509, Technical Digest - 15th OptoElectronics and Communications Conference, OECC2010, pp. 512-513, 15th OptoElectronics and Communications Conference, OECC2010, Sapporo, Japan, 10-07-05.

A novel three-terminal transistor-based Mach-Zehnder interferometric modulator on silicon-on-silicon (SOS) substrate. / Hsu, Mao Teng; Chuang, Wen-Kuei; Chou, Shen Horng et al.
Technical Digest - 15th OptoElectronics and Communications Conference, OECC2010. 2010. p. 512-513 5588509 (Technical Digest - 15th OptoElectronics and Communications Conference, OECC2010).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - A novel three-terminal transistor-based Mach-Zehnder interferometric modulator on silicon-on-silicon (SOS) substrate

AU - Hsu, Mao Teng

AU - Chuang, Wen-Kuei

AU - Chou, Shen Horng

AU - Lee, Yao Jen

PY - 2010/11/29

Y1 - 2010/11/29

N2 - We present a new three-terminal transistor, or the double-diode transistor (DDT) based Mach-Zehnder interferometric (MZI) modulator fabricated on silicon-on-silicon (SOS) substrate. The DDT structure is first analyzed in terms of a simplest ideal equivalent circuit, before DDT based MZI modulator, and measure the electronic and optical characteristics of DDT based Mach-Zehnder interference. In the end, we prove that the current pass thought our device will lead to thermal-optic effect not free carrier injection effect. This result can give a good explanation of that why the optical signal response times of SOS MZI modulators are 4∼ 5 orders slower than the response time of the I sd current.

AB - We present a new three-terminal transistor, or the double-diode transistor (DDT) based Mach-Zehnder interferometric (MZI) modulator fabricated on silicon-on-silicon (SOS) substrate. The DDT structure is first analyzed in terms of a simplest ideal equivalent circuit, before DDT based MZI modulator, and measure the electronic and optical characteristics of DDT based Mach-Zehnder interference. In the end, we prove that the current pass thought our device will lead to thermal-optic effect not free carrier injection effect. This result can give a good explanation of that why the optical signal response times of SOS MZI modulators are 4∼ 5 orders slower than the response time of the I sd current.

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M3 - Conference contribution

AN - SCOPUS:78649271301

SN - 9784885522451

T3 - Technical Digest - 15th OptoElectronics and Communications Conference, OECC2010

SP - 512

EP - 513

BT - Technical Digest - 15th OptoElectronics and Communications Conference, OECC2010

T2 - 15th OptoElectronics and Communications Conference, OECC2010

Y2 - 5 July 2010 through 9 July 2010

ER -

A novel three-terminal transistor-based Mach-Zehnder interferometric modulator on silicon-on-silicon (SOS) substrate

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