A novel transparent AZO-gated Al0.2Ga0.8As/In 0.2Ga0.8As pHEMT and photosensing characteristics thereof

Ching Sung Lee, Bo Yi Chou, Wei Chou Hsu

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8 Citations (Scopus)


A novel transparent Al-doped ZnO (AZO)-gated Al0.2Ga 0.8As/In0.2Ga0.8As pseudomorphic high-electron mobility transistor (pHEMT) has been comprehensively investigated. The proposed AZO-gated pHEMT has demonstrated superior temperature-dependent performance, including two-terminal gatedrain breakdown/turn-on voltages of - 63/3.4 (- 56.4/3.4) V, an intri- AV of 257 (176), and a gate voltage swing of 1.18 (1.13) V at 300 (450) K. An excellent thermal threshold coefficient ∂Vth/∂T of -1.8 mV/K was also obtained. A conventional Au-gated device with the same gate dimensions of 1 × μm2 was also fabricated in comparison. In addition, high optical transmittance values of 82%98% for incident energy values of 1.243.54 eV are achieved in the AZO film. The present AZO-gated HEMT has demonstrated three-terminal tunable optical responsivity due to a photovoltaic effect. Photosensing characteristics under different radiation wavelengths of white light, red light (632 nm), and near infrared (980 nm) are also studied.

Original languageEnglish
Article number5699355
Pages (from-to)725-731
Number of pages7
JournalIEEE Transactions on Electron Devices
Issue number3
Publication statusPublished - 2011 Mar 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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