A novel, very high breakdown voltage, field effect transistor (FET) using a camel diode structure instead of a Schottky barrier gate has been fabricated successfully by molecular beam epitaxy. The camel diode gate has several advantages over a conventional metal-electron-semiconductor FET, including elimination of metallurgical difficulties of the metal-semiconductor contact, relatively easy adjustment of built-in voltage and the potential for improving reliability in adverse environments and under high power dissipation. If the gate length is reduced to 1 microm, a transconductance in excess of 200 mS mm-1 can be expected. A significant improvement of the gate-drain breakdown voltage to 70 V has been obtained. This excellent value is superior to those reported for other GaAs FETs. Consequently, the proposed structure is suitable for high power applications.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry