A novel, very high breakdown voltage, field effect transistor prepared by molecular beam epitaxy

W. C. Liu, W. S. Lour, C. Y. Sun, H. R. Chen

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)

Abstract

A novel, very high breakdown voltage, field effect transistor (FET) using a camel diode structure instead of a Schottky barrier gate has been fabricated successfully by molecular beam epitaxy. The camel diode gate has several advantages over a conventional metal-electron-semiconductor FET, including elimination of metallurgical difficulties of the metal-semiconductor contact, relatively easy adjustment of built-in voltage and the potential for improving reliability in adverse environments and under high power dissipation. If the gate length is reduced to 1 microm, a transconductance in excess of 200 mS mm-1 can be expected. A significant improvement of the gate-drain breakdown voltage to 70 V has been obtained. This excellent value is superior to those reported for other GaAs FETs. Consequently, the proposed structure is suitable for high power applications.

Original languageEnglish
Pages (from-to)1-6
Number of pages6
JournalThin Solid Films
Volume195
Issue number1-2
DOIs
Publication statusPublished - 1991 Jan

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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