A novel, very high breakdown voltage, field effect transistor prepared by molecular beam epitaxy

W. C. Liu, W. S. Lour, C. Y. Sun, H. R. Chen

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)

Fingerprint

Dive into the research topics of 'A novel, very high breakdown voltage, field effect transistor prepared by molecular beam epitaxy'. Together they form a unique fingerprint.

Chemical Compounds

Engineering & Materials Science

Physics & Astronomy