A novel waveguide structure to reduce beam divergence and threshold current in GaInP/AlGaInP visible quantum-well lasers

Wen Liang Li; Yan Kuin Su; Shoou Jinn Chang; Chin Yao Tsai

doi:10.1063/1.120063

A novel waveguide structure to reduce beam divergence and threshold current in GaInP/AlGaInP visible quantum-well lasers

Wen Liang Li, Yan Kuin Su, Shoou Jinn Chang, Chin Yao Tsai

Institute of Microelectronics

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

A novel waveguide structure for AlGaInP visible separate confinement heterostructure quantum well laser with inserting low-refractive-index AlAs layers is theoretically investigated using the transfer matrix method. By using this structure, we can significantly improve the transverse beam divergence and reduce the threshold current. Otherwise, the inserting AlAs can also be used as a wet etching automatic stopped layer. Because the thermal resistance of AlAs is smaller than that of AlGaInP, the thermal characteristics of this novel structure are also better than the conventional AlGaInP visible lasers. With the inserting AlAs layers, the transverse beam divergence and the threshold current density can be reduced from 38° to 8.84° and 787 to 666.8 A/cm², respectively.

Original language	English
Pages (from-to)	2245-2247
Number of pages	3
Journal	Applied Physics Letters
Volume	71
Issue number	16
DOIs	https://doi.org/10.1063/1.120063
Publication status	Published - 1997 Oct 20

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.120063

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title = "A novel waveguide structure to reduce beam divergence and threshold current in GaInP/AlGaInP visible quantum-well lasers",

abstract = "A novel waveguide structure for AlGaInP visible separate confinement heterostructure quantum well laser with inserting low-refractive-index AlAs layers is theoretically investigated using the transfer matrix method. By using this structure, we can significantly improve the transverse beam divergence and reduce the threshold current. Otherwise, the inserting AlAs can also be used as a wet etching automatic stopped layer. Because the thermal resistance of AlAs is smaller than that of AlGaInP, the thermal characteristics of this novel structure are also better than the conventional AlGaInP visible lasers. With the inserting AlAs layers, the transverse beam divergence and the threshold current density can be reduced from 38° to 8.84° and 787 to 666.8 A/cm2, respectively.",

author = "Li, {Wen Liang} and Su, {Yan Kuin} and Chang, {Shoou Jinn} and Tsai, {Chin Yao}",

year = "1997",

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T1 - A novel waveguide structure to reduce beam divergence and threshold current in GaInP/AlGaInP visible quantum-well lasers

AU - Li, Wen Liang

AU - Su, Yan Kuin

AU - Chang, Shoou Jinn

AU - Tsai, Chin Yao

PY - 1997/10/20

Y1 - 1997/10/20

N2 - A novel waveguide structure for AlGaInP visible separate confinement heterostructure quantum well laser with inserting low-refractive-index AlAs layers is theoretically investigated using the transfer matrix method. By using this structure, we can significantly improve the transverse beam divergence and reduce the threshold current. Otherwise, the inserting AlAs can also be used as a wet etching automatic stopped layer. Because the thermal resistance of AlAs is smaller than that of AlGaInP, the thermal characteristics of this novel structure are also better than the conventional AlGaInP visible lasers. With the inserting AlAs layers, the transverse beam divergence and the threshold current density can be reduced from 38° to 8.84° and 787 to 666.8 A/cm2, respectively.

AB - A novel waveguide structure for AlGaInP visible separate confinement heterostructure quantum well laser with inserting low-refractive-index AlAs layers is theoretically investigated using the transfer matrix method. By using this structure, we can significantly improve the transverse beam divergence and reduce the threshold current. Otherwise, the inserting AlAs can also be used as a wet etching automatic stopped layer. Because the thermal resistance of AlAs is smaller than that of AlGaInP, the thermal characteristics of this novel structure are also better than the conventional AlGaInP visible lasers. With the inserting AlAs layers, the transverse beam divergence and the threshold current density can be reduced from 38° to 8.84° and 787 to 666.8 A/cm2, respectively.

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A novel waveguide structure to reduce beam divergence and threshold current in GaInP/AlGaInP visible quantum-well lasers

Abstract

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