Abstract
Experimental realization of a new p-channel silicon metal semiconductor field-effect transistors (Si MESFET) structure, utilizing two boron 6-doped layers placed in close proximity with one another as conducting channel, is reported for the first time. This simple homoepitaxially grown Si structure exhibits not only higher sheet carrier density but also higher hole mobility than those of a single 6-doped layer. The measured transconductance of the device is 1.44 mS/mm at 300 K with a gate length of 5 pm, which is a factor of 1.7 higher than the single 6-doped layer Si MESFET for the same dose in each 6-doped layer.
Original language | English |
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Pages (from-to) | 206-208 |
Number of pages | 3 |
Journal | IEEE Electron Device Letters |
Volume | 15 |
Issue number | 6 |
DOIs | |
Publication status | Published - 1994 Jun |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering