A p-Channel Coupled Delta-Doped Silicon MESFET Grown by Molecular Beam Epitaxy

S. J. Wang, S. L. Wu, H. D. Chung, T. K. Carns, X. Zheng, K. L. Wang

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)

Abstract

Experimental realization of a new p-channel silicon metal semiconductor field-effect transistors (Si MESFET) structure, utilizing two boron 6-doped layers placed in close proximity with one another as conducting channel, is reported for the first time. This simple homoepitaxially grown Si structure exhibits not only higher sheet carrier density but also higher hole mobility than those of a single 6-doped layer. The measured transconductance of the device is 1.44 mS/mm at 300 K with a gate length of 5 pm, which is a factor of 1.7 higher than the single 6-doped layer Si MESFET for the same dose in each 6-doped layer.

Original languageEnglish
Pages (from-to)206-208
Number of pages3
JournalIEEE Electron Device Letters
Volume15
Issue number6
DOIs
Publication statusPublished - 1994 Jun

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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