A path to 10% efficiency for tin sulfide devices

Niall M. Mangan; Riley E. Brandt; Vera Steinmann; R. Jaramillo; Jian V. Li; Jeremy R. Poindexter; Katy Hartman; Leizhi Sun; Roy G. Gordon; Tonio Buonassisi

doi:10.1109/PVSC.2014.6925404

A path to 10% efficiency for tin sulfide devices

Niall M. Mangan, Riley E. Brandt, Vera Steinmann, R. Jaramillo, Jian V. Li, Jeremy R. Poindexter, Katy Hartman, Leizhi Sun, Roy G. Gordon, Tonio Buonassisi

Department of Aeronautics and Astronautics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

14 Citations (Scopus)

Abstract

We preform device simulations of a tin sulfide (SnS) device stack using SCAPS to define a path to 10% efficient devices. We determine and constrain a baseline device model using recent experimental results on one of our 3.9% efficient cells. Through a multistep fitting process, we find a conduction band cliff of -0.2 eV between SnS and Zn(O,S) to be limiting the open circuit voltage (V_OC). To move towards a higher efficiency, we can optimize the buffer layer band alignment. Improvement of the SnS lifetime to >1 ns is necessary to reach 10% efficiency. Additionally, absorber-buffer interface recombination must be suppressed, either by reducing recombination activity of defects or creating a strong inversion layer at the interface.

Original language	English
Title of host publication	2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	2373-2378
Number of pages	6
ISBN (Electronic)	9781479943982
DOIs	https://doi.org/10.1109/PVSC.2014.6925404
Publication status	Published - 2014 Oct 15
Event	40th IEEE Photovoltaic Specialist Conference, PVSC 2014 - Denver, United States Duration: 2014 Jun 8 → 2014 Jun 13

Publication series

Name	2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014

Other

Other	40th IEEE Photovoltaic Specialist Conference, PVSC 2014
Country/Territory	United States
City	Denver
Period	14-06-08 → 14-06-13

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

Access to Document

10.1109/PVSC.2014.6925404

Cite this

Mangan, N. M., Brandt, R. E., Steinmann, V., Jaramillo, R., Li, J. V., Poindexter, J. R., Hartman, K., Sun, L., Gordon, R. G., & Buonassisi, T. (2014). A path to 10% efficiency for tin sulfide devices. In 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014 (pp. 2373-2378). Article 6925404 (2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2014.6925404

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abstract = "We preform device simulations of a tin sulfide (SnS) device stack using SCAPS to define a path to 10% efficient devices. We determine and constrain a baseline device model using recent experimental results on one of our 3.9% efficient cells. Through a multistep fitting process, we find a conduction band cliff of -0.2 eV between SnS and Zn(O,S) to be limiting the open circuit voltage (VOC). To move towards a higher efficiency, we can optimize the buffer layer band alignment. Improvement of the SnS lifetime to >1 ns is necessary to reach 10% efficiency. Additionally, absorber-buffer interface recombination must be suppressed, either by reducing recombination activity of defects or creating a strong inversion layer at the interface.",

author = "Mangan, {Niall M.} and Brandt, {Riley E.} and Vera Steinmann and R. Jaramillo and Li, {Jian V.} and Poindexter, {Jeremy R.} and Katy Hartman and Leizhi Sun and Gordon, {Roy G.} and Tonio Buonassisi",

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note = "40th IEEE Photovoltaic Specialist Conference, PVSC 2014 ; Conference date: 08-06-2014 Through 13-06-2014",

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Mangan, NM, Brandt, RE, Steinmann, V, Jaramillo, R, Li, JV, Poindexter, JR, Hartman, K, Sun, L, Gordon, RG & Buonassisi, T 2014, A path to 10% efficiency for tin sulfide devices. in 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014., 6925404, 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014, Institute of Electrical and Electronics Engineers Inc., pp. 2373-2378, 40th IEEE Photovoltaic Specialist Conference, PVSC 2014, Denver, United States, 14-06-08. https://doi.org/10.1109/PVSC.2014.6925404

A path to 10% efficiency for tin sulfide devices. / Mangan, Niall M.; Brandt, Riley E.; Steinmann, Vera et al.
2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014. Institute of Electrical and Electronics Engineers Inc., 2014. p. 2373-2378 6925404 (2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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A path to 10% efficiency for tin sulfide devices

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