A Pd/oxide/AlGaAs (MOS) junction resistor-type hydrogen sensor

Ching Wen Hung, Huey-Ing Chen, Kun Wei Lin, Tsung Han Tsai, Tzu Pin Chen, Li Yang Chen, Kuei Yi Chu, Wen-Chau Liu

Research output: Chapter in Book/Report/Conference proceedingConference contribution


An interesting Pd/oxide/AlGaAs metal oxide semiconductor (MOS) junction resistor-type hydrogen sensor, based on the current-voltage characteristics in the linear region of an AlGaAs-based PHEMT structure, is fabricated and studied. A simple model is employed to elucidate the hydrogen detection mechanism. The dissociation of H2, diffusion of H atoms and formation of a dipole layer cause a significant decrease in channel resistance. Experimental results show that the VGS bias significantly affects the resistance sensitivity, conductance variation, current variation, transient response, and response time. At 30°C, a significant resistance response of 33.3% (82.8%) to 4.3 (9970) ppm H2/air is obtained at VGS=-0.6 V. Nevertheless, the largest conductance variation (ΔG) appears to be in the range between VGS=-0.3 and -0.4 V. The transient response at V GS=-0.3 V shows larger current variations, accompanying the longer response time than those at VGS=0 V.

Original languageEnglish
Title of host publicationIWJT-2008 - Extended Abstracts 2008 International Workshop on Junction Technology
Number of pages4
Publication statusPublished - 2008 Sept 8
EventIWJT-2008 - International Workshop on Junction Technology - Shanghai, China
Duration: 2008 May 152008 May 16

Publication series

NameIWJT-2008 - Extended Abstracts 2008 International Workshop on Junction Technology


OtherIWJT-2008 - International Workshop on Junction Technology

All Science Journal Classification (ASJC) codes

  • Hardware and Architecture
  • Electrical and Electronic Engineering


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