TY - GEN
T1 - A Pd/oxide/AlGaAs (MOS) junction resistor-type hydrogen sensor
AU - Hung, Ching Wen
AU - Chen, Huey-Ing
AU - Lin, Kun Wei
AU - Tsai, Tsung Han
AU - Chen, Tzu Pin
AU - Chen, Li Yang
AU - Chu, Kuei Yi
AU - Liu, Wen-Chau
PY - 2008/9/8
Y1 - 2008/9/8
N2 - An interesting Pd/oxide/AlGaAs metal oxide semiconductor (MOS) junction resistor-type hydrogen sensor, based on the current-voltage characteristics in the linear region of an AlGaAs-based PHEMT structure, is fabricated and studied. A simple model is employed to elucidate the hydrogen detection mechanism. The dissociation of H2, diffusion of H atoms and formation of a dipole layer cause a significant decrease in channel resistance. Experimental results show that the VGS bias significantly affects the resistance sensitivity, conductance variation, current variation, transient response, and response time. At 30°C, a significant resistance response of 33.3% (82.8%) to 4.3 (9970) ppm H2/air is obtained at VGS=-0.6 V. Nevertheless, the largest conductance variation (ΔG) appears to be in the range between VGS=-0.3 and -0.4 V. The transient response at V GS=-0.3 V shows larger current variations, accompanying the longer response time than those at VGS=0 V.
AB - An interesting Pd/oxide/AlGaAs metal oxide semiconductor (MOS) junction resistor-type hydrogen sensor, based on the current-voltage characteristics in the linear region of an AlGaAs-based PHEMT structure, is fabricated and studied. A simple model is employed to elucidate the hydrogen detection mechanism. The dissociation of H2, diffusion of H atoms and formation of a dipole layer cause a significant decrease in channel resistance. Experimental results show that the VGS bias significantly affects the resistance sensitivity, conductance variation, current variation, transient response, and response time. At 30°C, a significant resistance response of 33.3% (82.8%) to 4.3 (9970) ppm H2/air is obtained at VGS=-0.6 V. Nevertheless, the largest conductance variation (ΔG) appears to be in the range between VGS=-0.3 and -0.4 V. The transient response at V GS=-0.3 V shows larger current variations, accompanying the longer response time than those at VGS=0 V.
UR - https://www.scopus.com/pages/publications/50849124135
UR - https://www.scopus.com/pages/publications/50849124135#tab=citedBy
U2 - 10.1109/IWJT.2008.4540045
DO - 10.1109/IWJT.2008.4540045
M3 - Conference contribution
AN - SCOPUS:50849124135
SN - 9781424417384
T3 - IWJT-2008 - Extended Abstracts 2008 International Workshop on Junction Technology
SP - 179
EP - 182
BT - IWJT-2008 - Extended Abstracts 2008 International Workshop on Junction Technology
T2 - IWJT-2008 - International Workshop on Junction Technology
Y2 - 15 May 2008 through 16 May 2008
ER -