A physics-based compact model for nano-scale DG and FD/SOI MOSFETs

Jerry G. Possum, Lixin Ge, Meng-Hsueh Chiang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

A process/physics-based compact model (UFDG) for double-gate (DG) MOSFETs is overviewed. The model, in essence, is a compact Poisson-Schrödinger solver, including accountings for short-channel effects, and is applicable to nano-scale fully depleted (FD) SOI MOSFETs as well as generic DG devices in ultra-thin Si films. The utility of UFDG is demonstrated by using it in Spice3 to design and characterize thin Si-film MOSFETs and to project extremely scaled DG and FD/SOI CMOS performances.

Original languageEnglish
Title of host publication2003 Nanotechnology Conference and Trade Show - Nanotech 2003
EditorsM. Laudon, B. Romanowicz
Pages274-277
Number of pages4
Publication statusPublished - 2003 Dec 1
Event2003 Nanotechnology Conference and Trade Show - Nanotech 2003 - San Francisco, CA, United States
Duration: 2003 Feb 232003 Feb 27

Publication series

Name2003 Nanotechnology Conference and Trade Show - Nanotech 2003
Volume2

Other

Other2003 Nanotechnology Conference and Trade Show - Nanotech 2003
CountryUnited States
CitySan Francisco, CA
Period03-02-2303-02-27

Fingerprint

Physics

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Possum, J. G., Ge, L., & Chiang, M-H. (2003). A physics-based compact model for nano-scale DG and FD/SOI MOSFETs. In M. Laudon, & B. Romanowicz (Eds.), 2003 Nanotechnology Conference and Trade Show - Nanotech 2003 (pp. 274-277). (2003 Nanotechnology Conference and Trade Show - Nanotech 2003; Vol. 2).
Possum, Jerry G. ; Ge, Lixin ; Chiang, Meng-Hsueh. / A physics-based compact model for nano-scale DG and FD/SOI MOSFETs. 2003 Nanotechnology Conference and Trade Show - Nanotech 2003. editor / M. Laudon ; B. Romanowicz. 2003. pp. 274-277 (2003 Nanotechnology Conference and Trade Show - Nanotech 2003).
@inproceedings{27a7bc77ff304018a57e387859cd0b56,
title = "A physics-based compact model for nano-scale DG and FD/SOI MOSFETs",
abstract = "A process/physics-based compact model (UFDG) for double-gate (DG) MOSFETs is overviewed. The model, in essence, is a compact Poisson-Schr{\"o}dinger solver, including accountings for short-channel effects, and is applicable to nano-scale fully depleted (FD) SOI MOSFETs as well as generic DG devices in ultra-thin Si films. The utility of UFDG is demonstrated by using it in Spice3 to design and characterize thin Si-film MOSFETs and to project extremely scaled DG and FD/SOI CMOS performances.",
author = "Possum, {Jerry G.} and Lixin Ge and Meng-Hsueh Chiang",
year = "2003",
month = "12",
day = "1",
language = "English",
isbn = "0972842209",
series = "2003 Nanotechnology Conference and Trade Show - Nanotech 2003",
pages = "274--277",
editor = "M. Laudon and B. Romanowicz",
booktitle = "2003 Nanotechnology Conference and Trade Show - Nanotech 2003",

}

Possum, JG, Ge, L & Chiang, M-H 2003, A physics-based compact model for nano-scale DG and FD/SOI MOSFETs. in M Laudon & B Romanowicz (eds), 2003 Nanotechnology Conference and Trade Show - Nanotech 2003. 2003 Nanotechnology Conference and Trade Show - Nanotech 2003, vol. 2, pp. 274-277, 2003 Nanotechnology Conference and Trade Show - Nanotech 2003, San Francisco, CA, United States, 03-02-23.

A physics-based compact model for nano-scale DG and FD/SOI MOSFETs. / Possum, Jerry G.; Ge, Lixin; Chiang, Meng-Hsueh.

2003 Nanotechnology Conference and Trade Show - Nanotech 2003. ed. / M. Laudon; B. Romanowicz. 2003. p. 274-277 (2003 Nanotechnology Conference and Trade Show - Nanotech 2003; Vol. 2).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

TY - GEN

T1 - A physics-based compact model for nano-scale DG and FD/SOI MOSFETs

AU - Possum, Jerry G.

AU - Ge, Lixin

AU - Chiang, Meng-Hsueh

PY - 2003/12/1

Y1 - 2003/12/1

N2 - A process/physics-based compact model (UFDG) for double-gate (DG) MOSFETs is overviewed. The model, in essence, is a compact Poisson-Schrödinger solver, including accountings for short-channel effects, and is applicable to nano-scale fully depleted (FD) SOI MOSFETs as well as generic DG devices in ultra-thin Si films. The utility of UFDG is demonstrated by using it in Spice3 to design and characterize thin Si-film MOSFETs and to project extremely scaled DG and FD/SOI CMOS performances.

AB - A process/physics-based compact model (UFDG) for double-gate (DG) MOSFETs is overviewed. The model, in essence, is a compact Poisson-Schrödinger solver, including accountings for short-channel effects, and is applicable to nano-scale fully depleted (FD) SOI MOSFETs as well as generic DG devices in ultra-thin Si films. The utility of UFDG is demonstrated by using it in Spice3 to design and characterize thin Si-film MOSFETs and to project extremely scaled DG and FD/SOI CMOS performances.

UR - http://www.scopus.com/inward/record.url?scp=6344252806&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=6344252806&partnerID=8YFLogxK

M3 - Conference contribution

SN - 0972842209

T3 - 2003 Nanotechnology Conference and Trade Show - Nanotech 2003

SP - 274

EP - 277

BT - 2003 Nanotechnology Conference and Trade Show - Nanotech 2003

A2 - Laudon, M.

A2 - Romanowicz, B.

ER -

Possum JG, Ge L, Chiang M-H. A physics-based compact model for nano-scale DG and FD/SOI MOSFETs. In Laudon M, Romanowicz B, editors, 2003 Nanotechnology Conference and Trade Show - Nanotech 2003. 2003. p. 274-277. (2003 Nanotechnology Conference and Trade Show - Nanotech 2003).