A planarized shallow-trench-isolation for GaAs devices fabrication using liquid phase chemical enhanced oxidation process

Jau Yi Wu, Hwei Heng Wang, Po Wen Sze, Yeong Her Wang, Mau Phon Houng

Research output: Contribution to journalLetterpeer-review

9 Citations (Scopus)

Abstract

A new planarized trench isolation technique for GaAs devices fabrication by a liquid phase chemical-enhanced oxidation (LPCEO) method is proposed. The LPCEO-trench-isolation technique can be operated at low temperature with a simple and low-cost process. As compared with conventional mesa isolation, the LPCEO-trench-isolation can provide better planarity and isolation properties. Finally, GaAs MOSFET's fabricated with LPCEO-trench-isolation and selective oxidized gate both by the LPCEO method are demonstrated.

Original languageEnglish
Pages (from-to)237-239
Number of pages3
JournalIEEE Electron Device Letters
Volume23
Issue number5
DOIs
Publication statusPublished - 2002 May 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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