A possible pressure-induced superconducting-semiconducting transition in nearly optimally doped single crystalline YBa2Cu3O 7-

T. Muramatsu; D. Pham; C. W. Chu

doi:10.1063/1.3623475

A possible pressure-induced superconducting-semiconducting transition in nearly optimally doped single crystalline YBa₂Cu₃O _7-

T. Muramatsu, D. Pham, C. W. Chu

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Abstract

The pressure effect on the single-crystalline, nearly optimally doped high temperature cuprate superconductor YBa₂Cu₃O_7- with a sharp ambient transition temperature of 90.7 K has been investigated resistively up to 29 GPa. An abrupt disappearance of superconductivity at 60 K under ∼24 GPa was detected, accompanied by a thermally activated resistance, suggesting a possible pressure-induced superconducting-semiconducting transition. By comparing the present results with those of recent high pressure work on Bi₂Sr₂Ca₂Cu₃O_10-, it is proposed that the control of such electronic instabilities may further help raise the superconducting transition temperature record of 164 K in tri-layer cuprate superconductors by pressures.

Original language	English
Article number	052508
Journal	Applied Physics Letters
Volume	99
Issue number	5
DOIs	https://doi.org/10.1063/1.3623475
Publication status	Published - 2011 Aug 1

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.3623475

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title = "A possible pressure-induced superconducting-semiconducting transition in nearly optimally doped single crystalline YBa2Cu3O 7-",

abstract = "The pressure effect on the single-crystalline, nearly optimally doped high temperature cuprate superconductor YBa2Cu3O7- with a sharp ambient transition temperature of 90.7 K has been investigated resistively up to 29 GPa. An abrupt disappearance of superconductivity at 60 K under ∼24 GPa was detected, accompanied by a thermally activated resistance, suggesting a possible pressure-induced superconducting-semiconducting transition. By comparing the present results with those of recent high pressure work on Bi2Sr2Ca2Cu3O10-, it is proposed that the control of such electronic instabilities may further help raise the superconducting transition temperature record of 164 K in tri-layer cuprate superconductors by pressures.",

author = "T. Muramatsu and D. Pham and Chu, {C. W.}",

note = "Funding Information: The work in Houston is supported in part by AFOSR No. FA9550-09-1-0656, DoE subcontract 4000086706 through ORNL, AFRL subcontract R15901 (CONTACT) through Rice University, the T. L. L. Temple Foundation, and TCSUH; and at LBNL by the Director, Office of Science, OBES, DMSE, and DoE. ",

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AU - Pham, D.

AU - Chu, C. W.

N1 - Funding Information: The work in Houston is supported in part by AFOSR No. FA9550-09-1-0656, DoE subcontract 4000086706 through ORNL, AFRL subcontract R15901 (CONTACT) through Rice University, the T. L. L. Temple Foundation, and TCSUH; and at LBNL by the Director, Office of Science, OBES, DMSE, and DoE.

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N2 - The pressure effect on the single-crystalline, nearly optimally doped high temperature cuprate superconductor YBa2Cu3O7- with a sharp ambient transition temperature of 90.7 K has been investigated resistively up to 29 GPa. An abrupt disappearance of superconductivity at 60 K under ∼24 GPa was detected, accompanied by a thermally activated resistance, suggesting a possible pressure-induced superconducting-semiconducting transition. By comparing the present results with those of recent high pressure work on Bi2Sr2Ca2Cu3O10-, it is proposed that the control of such electronic instabilities may further help raise the superconducting transition temperature record of 164 K in tri-layer cuprate superconductors by pressures.

AB - The pressure effect on the single-crystalline, nearly optimally doped high temperature cuprate superconductor YBa2Cu3O7- with a sharp ambient transition temperature of 90.7 K has been investigated resistively up to 29 GPa. An abrupt disappearance of superconductivity at 60 K under ∼24 GPa was detected, accompanied by a thermally activated resistance, suggesting a possible pressure-induced superconducting-semiconducting transition. By comparing the present results with those of recent high pressure work on Bi2Sr2Ca2Cu3O10-, it is proposed that the control of such electronic instabilities may further help raise the superconducting transition temperature record of 164 K in tri-layer cuprate superconductors by pressures.

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A possible pressure-induced superconducting-semiconducting transition in nearly optimally doped single crystalline YBa₂Cu₃O _7-

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