A pragmatic design methodology using proper isolation and doping for bulk FinFETs

Yi Bo Liao, Meng Hsueh Chiang, Yu Sheng Lai, Wei Chou Hsu

Research output: Contribution to journalArticle

Abstract

A feasible device design methodology for bulk FinFETs is proposed. An optimal yet simple process technique is shown to achieve good performance while maintaining low leakage current with thin gate-to-substrate isolation oxide and moderately doped substrate. In contrast, high substrate doping underneath the fin and thick isolation oxide are usually needed to prevent substrate leakage in conventional bulk FinFETs. A design window accounting for isolation oxide thickness and substrate doping level is proposed for low power and high performance application. Sufficient substrate doping (in the mid-1018 cm-3 range) and proper isolation oxide of 10s nm are suggested based on our performance projection.

Original languageEnglish
Pages (from-to)48-53
Number of pages6
JournalSolid-State Electronics
Volume85
DOIs
Publication statusPublished - 2013 May 13

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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