TY - JOUR
T1 - A Pre-Bootstrapping Method for Use in Gate Driver Circuits to Improve the Scan Pulse Delay of High-Resolution TFT-LCD Systems
AU - Lin, Chih Lung
AU - Deng, Ming Yang
AU - Chiu, Wen Ching
AU - Shih, Li Wei
AU - Chang, Jui Hung
AU - Lin, Yu Sheng
AU - Lee, Ching En
N1 - Funding Information:
Manuscript received February 12, 2019; revised May 16, 2019 and July 11, 2019; accepted August 22, 2019. Date of publication September 17, 2019; date of current version March 31, 2020. This work was supported in part by the Advanced Optoelectronic Technology Center, in part by the National Cheng Kung University, the Ministry of Education, the Ministry of Science and Technology of Taiwan under Grant 107-2221-E-006-188-MY3 and Grant 107-2622-E-006-027-CC2, and in part by the AU Optronics Corporation. (Corresponding author: Chih-Lung Lin.) C.-L. Lin is with the Department of Electrical Engineering and the Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 701-01, Taiwan (e-mail:,[email protected]).
Funding Information:
This work was supported in part by the Advanced Optoelectronic Technology Center, in part by the National Cheng Kung University, the Ministry of Education, theMinistry of Science and Technology of Taiwan under Grant 107-2221- E-006-188-MY3 and Grant 107-2622-E-006-027-CC2, and in part by the AU Optronics Corporation.
Publisher Copyright:
© 2019 IEEE.
PY - 2020/8/1
Y1 - 2020/8/1
N2 - A new pre-bootstrapping method (PBM) using hydrogenated amorphous silicon (a-Si:H) thin-film transistors (TFTs) for a gate driver that is used in high-frame-rate or high-resolution displays is presented in this article. The PBM utilizes the capacitive coupling effect to bootstrap the gate voltage of the driving TFT twice to improve the insufficient field-effect mobility of the a-Si:H TFT without the need to enlarge the driving TFT. To investigate the driving capability of an a-Si:H TFT varying with the gate bias, a simulation model, based on the measured transfer curves of an a-Si:H TFT, is developed. Based on the specifications of 5.9-in panel with full high-definition resolution and 60 Hz frame rate, gate drivers with different structures are fabricated and compared. The experimental results demonstrate that the rising and the falling time of the output waveform generated from the gate driver with PBM are 45.21% and 32.04% shorter than those of the conventional gate driver. Furthermore, under a doubling of loadings, a 50 kHz clock frequency, and operation at -20 °C, the proposed PBM improve the performance of a gate driver. During an accelerated lifetime test at 85 °C, the gate driver with PBM can generate stable output waveforms for 864 h, verifying its long-term reliability.
AB - A new pre-bootstrapping method (PBM) using hydrogenated amorphous silicon (a-Si:H) thin-film transistors (TFTs) for a gate driver that is used in high-frame-rate or high-resolution displays is presented in this article. The PBM utilizes the capacitive coupling effect to bootstrap the gate voltage of the driving TFT twice to improve the insufficient field-effect mobility of the a-Si:H TFT without the need to enlarge the driving TFT. To investigate the driving capability of an a-Si:H TFT varying with the gate bias, a simulation model, based on the measured transfer curves of an a-Si:H TFT, is developed. Based on the specifications of 5.9-in panel with full high-definition resolution and 60 Hz frame rate, gate drivers with different structures are fabricated and compared. The experimental results demonstrate that the rising and the falling time of the output waveform generated from the gate driver with PBM are 45.21% and 32.04% shorter than those of the conventional gate driver. Furthermore, under a doubling of loadings, a 50 kHz clock frequency, and operation at -20 °C, the proposed PBM improve the performance of a gate driver. During an accelerated lifetime test at 85 °C, the gate driver with PBM can generate stable output waveforms for 864 h, verifying its long-term reliability.
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U2 - 10.1109/TIE.2019.2940000
DO - 10.1109/TIE.2019.2940000
M3 - Article
AN - SCOPUS:85082919164
SN - 0278-0046
VL - 67
SP - 7015
EP - 7024
JO - IEEE Transactions on Industrial Electronics
JF - IEEE Transactions on Industrial Electronics
IS - 8
M1 - 8842621
ER -