Abstract
The recovery of gallium (Ga) from gallium arsenide (GaAs) scrap using a leaching-ion exchange method was investigated. The ground GaAs scrap was leached, using 2.0 N nitric acid at 30 °C for 1.0 h, and the dissolution of Ga and arsenic (As) reached 98%. The pregnant solution with a 1/20 dilution ratio was then passed through a weak acid chelating resin Diaion CR-11. Highly charged Ga3+ has the ability to form complexes with the chelating resin and separate from the coexisting H3AsO4 in the leachate with very low pH. The loaded column was eluted with 0.1 M H2SO4, and the final concentrated solution had 4.5 g/L of Ga with 99.3% purity. The euent from the column was further processed to remove As by ferric arsenicate precipitation, and reused continuously as the dilution water for raw leachate.
Original language | English |
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Article number | 921 |
Journal | Processes |
Volume | 7 |
Issue number | 12 |
DOIs | |
Publication status | Published - 2019 Dec 1 |
All Science Journal Classification (ASJC) codes
- Bioengineering
- Chemical Engineering (miscellaneous)
- Process Chemistry and Technology