A process for the recovery of gallium from gallium arsenide scrap

Tsai Hsin Cheng; Chia Ju Liu; Tang Yi Tsai; Yun Hwei Shen

doi:10.3390/PR7120921

A process for the recovery of gallium from gallium arsenide scrap

Tsai Hsin Cheng, Chia Ju Liu, Tang Yi Tsai, Yun Hwei Shen

Department of Resources Engineering

Research output: Contribution to journal › Article

Abstract

The recovery of gallium (Ga) from gallium arsenide (GaAs) scrap using a leaching-ion exchange method was investigated. The ground GaAs scrap was leached, using 2.0 N nitric acid at 30 °C for 1.0 h, and the dissolution of Ga and arsenic (As) reached 98%. The pregnant solution with a 1/20 dilution ratio was then passed through a weak acid chelating resin Diaion CR-11. Highly charged Ga³⁺ has the ability to form complexes with the chelating resin and separate from the coexisting H₃AsO₄ in the leachate with very low pH. The loaded column was eluted with 0.1 M H₂SO₄, and the final concentrated solution had 4.5 g/L of Ga with 99.3% purity. The euent from the column was further processed to remove As by ferric arsenicate precipitation, and reused continuously as the dilution water for raw leachate.

Original language	English
Article number	921
Journal	Processes
Volume	7
Issue number	12
DOIs	https://doi.org/10.3390/PR7120921
Publication status	Published - 2019 Dec 1

All Science Journal Classification (ASJC) codes

Bioengineering
Chemical Engineering (miscellaneous)
Process Chemistry and Technology

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10.3390/PR7120921

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Cheng, T. H., Liu, C. J., Tsai, T. Y., & Shen, Y. H. (2019). A process for the recovery of gallium from gallium arsenide scrap. Processes, 7(12), [921]. https://doi.org/10.3390/PR7120921

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abstract = "The recovery of gallium (Ga) from gallium arsenide (GaAs) scrap using a leaching-ion exchange method was investigated. The ground GaAs scrap was leached, using 2.0 N nitric acid at 30 °C for 1.0 h, and the dissolution of Ga and arsenic (As) reached 98%. The pregnant solution with a 1/20 dilution ratio was then passed through a weak acid chelating resin Diaion CR-11. Highly charged Ga3+ has the ability to form complexes with the chelating resin and separate from the coexisting H3AsO4 in the leachate with very low pH. The loaded column was eluted with 0.1 M H2SO4, and the final concentrated solution had 4.5 g/L of Ga with 99.3% purity. The euent from the column was further processed to remove As by ferric arsenicate precipitation, and reused continuously as the dilution water for raw leachate.",

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N2 - The recovery of gallium (Ga) from gallium arsenide (GaAs) scrap using a leaching-ion exchange method was investigated. The ground GaAs scrap was leached, using 2.0 N nitric acid at 30 °C for 1.0 h, and the dissolution of Ga and arsenic (As) reached 98%. The pregnant solution with a 1/20 dilution ratio was then passed through a weak acid chelating resin Diaion CR-11. Highly charged Ga3+ has the ability to form complexes with the chelating resin and separate from the coexisting H3AsO4 in the leachate with very low pH. The loaded column was eluted with 0.1 M H2SO4, and the final concentrated solution had 4.5 g/L of Ga with 99.3% purity. The euent from the column was further processed to remove As by ferric arsenicate precipitation, and reused continuously as the dilution water for raw leachate.

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