A Process Simulation Model for Silicon Ion Implantation in Undoped, LEC-Grown GaAs

A. Bindal; K. L. Wang; S. J. Chang; M. A. Kallel; P. K. Chu

doi:10.1149/1.2097391

A Process Simulation Model for Silicon Ion Implantation in Undoped, LEC-Grown GaAs

A. Bindal, K. L. Wang, S. J. Chang, M. A. Kallel, P. K. Chu

Research output: Contribution to journal › Article › peer-review

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Abstract

The activation efficiency of implanted Si in LEC grown GaAs has been investigated experimentally. Atomic and carrier distributions of the implant have been obtained using SIMS, conventional, and step-etch C-V techniques, respectively. Based on these experimental observations, Si activation efficiency is found to be a strong function of the implantation fluence and annealing temperature, and a weak function of the implantation energy and annealing time. An activation efficiency model is also constructed as the result of these experimental evaluations. For simplicity the model ignores all the weak processing parameters in the computation of activation efficiency. A model reproducing the atomic concentration profile for a given implant has also been developed to use in the activation efficiency model.

Original language	English
Pages (from-to)	2414-2420
Number of pages	7
Journal	Journal of the Electrochemical Society
Volume	136
Issue number	8
DOIs	https://doi.org/10.1149/1.2097391
Publication status	Published - 1989 Aug

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Materials Chemistry
Surfaces, Coatings and Films
Electrochemistry
Renewable Energy, Sustainability and the Environment

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title = "A Process Simulation Model for Silicon Ion Implantation in Undoped, LEC-Grown GaAs",

abstract = "The activation efficiency of implanted Si in LEC grown GaAs has been investigated experimentally. Atomic and carrier distributions of the implant have been obtained using SIMS, conventional, and step-etch C-V techniques, respectively. Based on these experimental observations, Si activation efficiency is found to be a strong function of the implantation fluence and annealing temperature, and a weak function of the implantation energy and annealing time. An activation efficiency model is also constructed as the result of these experimental evaluations. For simplicity the model ignores all the weak processing parameters in the computation of activation efficiency. A model reproducing the atomic concentration profile for a given implant has also been developed to use in the activation efficiency model.",

author = "A. Bindal and Wang, {K. L.} and Chang, {S. J.} and Kallel, {M. A.} and Chu, {P. K.}",

year = "1989",

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T1 - A Process Simulation Model for Silicon Ion Implantation in Undoped, LEC-Grown GaAs

AU - Bindal, A.

AU - Wang, K. L.

AU - Chang, S. J.

AU - Kallel, M. A.

AU - Chu, P. K.

PY - 1989/8

Y1 - 1989/8

N2 - The activation efficiency of implanted Si in LEC grown GaAs has been investigated experimentally. Atomic and carrier distributions of the implant have been obtained using SIMS, conventional, and step-etch C-V techniques, respectively. Based on these experimental observations, Si activation efficiency is found to be a strong function of the implantation fluence and annealing temperature, and a weak function of the implantation energy and annealing time. An activation efficiency model is also constructed as the result of these experimental evaluations. For simplicity the model ignores all the weak processing parameters in the computation of activation efficiency. A model reproducing the atomic concentration profile for a given implant has also been developed to use in the activation efficiency model.

AB - The activation efficiency of implanted Si in LEC grown GaAs has been investigated experimentally. Atomic and carrier distributions of the implant have been obtained using SIMS, conventional, and step-etch C-V techniques, respectively. Based on these experimental observations, Si activation efficiency is found to be a strong function of the implantation fluence and annealing temperature, and a weak function of the implantation energy and annealing time. An activation efficiency model is also constructed as the result of these experimental evaluations. For simplicity the model ignores all the weak processing parameters in the computation of activation efficiency. A model reproducing the atomic concentration profile for a given implant has also been developed to use in the activation efficiency model.

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JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

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ER -

A Process Simulation Model for Silicon Ion Implantation in Undoped, LEC-Grown GaAs

Abstract

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