A proposal for epitaxial thin film growth in outer space

Alex Ignatiev, C. W. Chu

Research output: Contribution to journalArticlepeer-review

8 Citations (Scopus)

Abstract

A new concept for materials processing in space exploits the ultra-vacuum component of space for thin film epitaxial growth. The unique low earth orbit space environment is expected to yield 10-14 torr or better pressures, semi-infinite pumping speeds, and large ultra-vacuum volume (~100 m3) without walls. These space ultra-vacuum properties promise major improvement in the quality, unique nature, and the throughput of epitaxially grown materials. Advanced thin film materials to be epitaxially grown in space include semiconductors, magnetic materials, and thin film high temperature superconductors.

Original languageEnglish
Pages (from-to)2639-2643
Number of pages5
JournalMetallurgical Transactions A
Volume19
Issue number11
DOIs
Publication statusPublished - 1988 Nov

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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