TY - JOUR
T1 - A proposal for epitaxial thin film growth in outer space
AU - Ignatiev, Alex
AU - Chu, C. W.
N1 - Copyright:
Copyright 2008 Elsevier B.V., All rights reserved.
PY - 1988/11
Y1 - 1988/11
N2 - A new concept for materials processing in space exploits the ultra-vacuum component of space for thin film epitaxial growth. The unique low earth orbit space environment is expected to yield 10-14 torr or better pressures, semi-infinite pumping speeds, and large ultra-vacuum volume (~100 m3) without walls. These space ultra-vacuum properties promise major improvement in the quality, unique nature, and the throughput of epitaxially grown materials. Advanced thin film materials to be epitaxially grown in space include semiconductors, magnetic materials, and thin film high temperature superconductors.
AB - A new concept for materials processing in space exploits the ultra-vacuum component of space for thin film epitaxial growth. The unique low earth orbit space environment is expected to yield 10-14 torr or better pressures, semi-infinite pumping speeds, and large ultra-vacuum volume (~100 m3) without walls. These space ultra-vacuum properties promise major improvement in the quality, unique nature, and the throughput of epitaxially grown materials. Advanced thin film materials to be epitaxially grown in space include semiconductors, magnetic materials, and thin film high temperature superconductors.
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U2 - 10.1007/BF02645795
DO - 10.1007/BF02645795
M3 - Article
AN - SCOPUS:0024104338
VL - 19
SP - 2639
EP - 2643
JO - Metallurgical Transactions A (Physical Metallurgy and Materials Science)
JF - Metallurgical Transactions A (Physical Metallurgy and Materials Science)
SN - 0360-2133
IS - 11
ER -