A Pt/AlGaN/GaN heterostructure field-effect transistor (HFET) prepared by an electrophoretic deposition (EPD)-gate approach

Ching Wen Hung, Ching Hong Chang, Wei Cheng Chen, Chun Chia Chen, Huey-Ing Chen, Yu Ting Tsai, Jung Hui Tsai, Wen-Chau Liu

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Based on an electrophoretic deposition (EPD)-gate approach, a Pt/AlGaN/GaN heterostructure field-effect transistor (HFET) is fabricated and investigated at higher temperatures. The Pt/AlGaN interface with nearly oxide-free is verified by an Auger Electron Spectroscopy (AES) depth profile for the studied EPD-HFET. This result substantially enhances device performance at room temperature (300 K). Experimentally, the studied EPD-HFET exhibits a high turn-on voltage, a well suppression on gate leakage, a superior maximum drain saturation current, and an excellent extrinsic transconductance. Moreover, the microwave performance of an EPD-HFET is demonstrated at room temperature. Consequentially, this EPD-gate approach gives a promise for high-performance electronic applications.

Original languageEnglish
Pages (from-to)5-9
Number of pages5
JournalSolid-State Electronics
Volume124
DOIs
Publication statusPublished - 2016 Oct 1

Fingerprint

High electron mobility transistors
field effect transistors
Transconductance
room temperature
transconductance
Auger electron spectroscopy
Temperature
Oxides
Auger spectroscopy
electron spectroscopy
leakage
Microwaves
aluminum gallium nitride
retarding
saturation
microwaves
oxides
Electric potential
electric potential
profiles

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Hung, Ching Wen ; Chang, Ching Hong ; Chen, Wei Cheng ; Chen, Chun Chia ; Chen, Huey-Ing ; Tsai, Yu Ting ; Tsai, Jung Hui ; Liu, Wen-Chau. / A Pt/AlGaN/GaN heterostructure field-effect transistor (HFET) prepared by an electrophoretic deposition (EPD)-gate approach. In: Solid-State Electronics. 2016 ; Vol. 124. pp. 5-9.
@article{1317b616b17f4c04b44c3f64a1083c8f,
title = "A Pt/AlGaN/GaN heterostructure field-effect transistor (HFET) prepared by an electrophoretic deposition (EPD)-gate approach",
abstract = "Based on an electrophoretic deposition (EPD)-gate approach, a Pt/AlGaN/GaN heterostructure field-effect transistor (HFET) is fabricated and investigated at higher temperatures. The Pt/AlGaN interface with nearly oxide-free is verified by an Auger Electron Spectroscopy (AES) depth profile for the studied EPD-HFET. This result substantially enhances device performance at room temperature (300 K). Experimentally, the studied EPD-HFET exhibits a high turn-on voltage, a well suppression on gate leakage, a superior maximum drain saturation current, and an excellent extrinsic transconductance. Moreover, the microwave performance of an EPD-HFET is demonstrated at room temperature. Consequentially, this EPD-gate approach gives a promise for high-performance electronic applications.",
author = "Hung, {Ching Wen} and Chang, {Ching Hong} and Chen, {Wei Cheng} and Chen, {Chun Chia} and Huey-Ing Chen and Tsai, {Yu Ting} and Tsai, {Jung Hui} and Wen-Chau Liu",
year = "2016",
month = "10",
day = "1",
doi = "10.1016/j.sse.2016.06.011",
language = "English",
volume = "124",
pages = "5--9",
journal = "Solid-State Electronics",
issn = "0038-1101",
publisher = "Elsevier Limited",

}

A Pt/AlGaN/GaN heterostructure field-effect transistor (HFET) prepared by an electrophoretic deposition (EPD)-gate approach. / Hung, Ching Wen; Chang, Ching Hong; Chen, Wei Cheng; Chen, Chun Chia; Chen, Huey-Ing; Tsai, Yu Ting; Tsai, Jung Hui; Liu, Wen-Chau.

In: Solid-State Electronics, Vol. 124, 01.10.2016, p. 5-9.

Research output: Contribution to journalArticle

TY - JOUR

T1 - A Pt/AlGaN/GaN heterostructure field-effect transistor (HFET) prepared by an electrophoretic deposition (EPD)-gate approach

AU - Hung, Ching Wen

AU - Chang, Ching Hong

AU - Chen, Wei Cheng

AU - Chen, Chun Chia

AU - Chen, Huey-Ing

AU - Tsai, Yu Ting

AU - Tsai, Jung Hui

AU - Liu, Wen-Chau

PY - 2016/10/1

Y1 - 2016/10/1

N2 - Based on an electrophoretic deposition (EPD)-gate approach, a Pt/AlGaN/GaN heterostructure field-effect transistor (HFET) is fabricated and investigated at higher temperatures. The Pt/AlGaN interface with nearly oxide-free is verified by an Auger Electron Spectroscopy (AES) depth profile for the studied EPD-HFET. This result substantially enhances device performance at room temperature (300 K). Experimentally, the studied EPD-HFET exhibits a high turn-on voltage, a well suppression on gate leakage, a superior maximum drain saturation current, and an excellent extrinsic transconductance. Moreover, the microwave performance of an EPD-HFET is demonstrated at room temperature. Consequentially, this EPD-gate approach gives a promise for high-performance electronic applications.

AB - Based on an electrophoretic deposition (EPD)-gate approach, a Pt/AlGaN/GaN heterostructure field-effect transistor (HFET) is fabricated and investigated at higher temperatures. The Pt/AlGaN interface with nearly oxide-free is verified by an Auger Electron Spectroscopy (AES) depth profile for the studied EPD-HFET. This result substantially enhances device performance at room temperature (300 K). Experimentally, the studied EPD-HFET exhibits a high turn-on voltage, a well suppression on gate leakage, a superior maximum drain saturation current, and an excellent extrinsic transconductance. Moreover, the microwave performance of an EPD-HFET is demonstrated at room temperature. Consequentially, this EPD-gate approach gives a promise for high-performance electronic applications.

UR - http://www.scopus.com/inward/record.url?scp=84989860785&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84989860785&partnerID=8YFLogxK

U2 - 10.1016/j.sse.2016.06.011

DO - 10.1016/j.sse.2016.06.011

M3 - Article

VL - 124

SP - 5

EP - 9

JO - Solid-State Electronics

JF - Solid-State Electronics

SN - 0038-1101

ER -