A Pt/AlGaN/GaN heterostructure field-effect transistor (HFET) prepared by an electrophoretic deposition (EPD)-gate approach

Ching Wen Hung; Ching Hong Chang; Wei Cheng Chen; Chun Chia Chen; Huey Ing Chen; Yu Ting Tsai; Jung Hui Tsai; Wen Chau Liu

doi:10.1016/j.sse.2016.06.011

A Pt/AlGaN/GaN heterostructure field-effect transistor (HFET) prepared by an electrophoretic deposition (EPD)-gate approach

Ching Wen Hung, Ching Hong Chang, Wei Cheng Chen, Chun Chia Chen, Huey Ing Chen, Yu Ting Tsai, Jung Hui Tsai, Wen Chau Liu

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

Based on an electrophoretic deposition (EPD)-gate approach, a Pt/AlGaN/GaN heterostructure field-effect transistor (HFET) is fabricated and investigated at higher temperatures. The Pt/AlGaN interface with nearly oxide-free is verified by an Auger Electron Spectroscopy (AES) depth profile for the studied EPD-HFET. This result substantially enhances device performance at room temperature (300 K). Experimentally, the studied EPD-HFET exhibits a high turn-on voltage, a well suppression on gate leakage, a superior maximum drain saturation current, and an excellent extrinsic transconductance. Moreover, the microwave performance of an EPD-HFET is demonstrated at room temperature. Consequentially, this EPD-gate approach gives a promise for high-performance electronic applications.

Original language	English
Pages (from-to)	5-9
Number of pages	5
Journal	Solid-State Electronics
Volume	124
DOIs	https://doi.org/10.1016/j.sse.2016.06.011
Publication status	Published - 2016 Oct 1

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1016/j.sse.2016.06.011

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title = "A Pt/AlGaN/GaN heterostructure field-effect transistor (HFET) prepared by an electrophoretic deposition (EPD)-gate approach",

abstract = "Based on an electrophoretic deposition (EPD)-gate approach, a Pt/AlGaN/GaN heterostructure field-effect transistor (HFET) is fabricated and investigated at higher temperatures. The Pt/AlGaN interface with nearly oxide-free is verified by an Auger Electron Spectroscopy (AES) depth profile for the studied EPD-HFET. This result substantially enhances device performance at room temperature (300 K). Experimentally, the studied EPD-HFET exhibits a high turn-on voltage, a well suppression on gate leakage, a superior maximum drain saturation current, and an excellent extrinsic transconductance. Moreover, the microwave performance of an EPD-HFET is demonstrated at room temperature. Consequentially, this EPD-gate approach gives a promise for high-performance electronic applications.",

author = "Hung, {Ching Wen} and Chang, {Ching Hong} and Chen, {Wei Cheng} and Chen, {Chun Chia} and Chen, {Huey Ing} and Tsai, {Yu Ting} and Tsai, {Jung Hui} and Liu, {Wen Chau}",

note = "Funding Information: Part of this work was supported by the Ministry of Science and Technology of the Republic of China under Contract No. MOST 103-2221-E-006-244-MY3 and the Advanced Optoelectronic. Technology Center , AOTC. Publisher Copyright: {\textcopyright} 2016 Elsevier Ltd",

year = "2016",

month = oct,

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doi = "10.1016/j.sse.2016.06.011",

language = "English",

volume = "124",

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journal = "Solid-State Electronics",

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T1 - A Pt/AlGaN/GaN heterostructure field-effect transistor (HFET) prepared by an electrophoretic deposition (EPD)-gate approach

AU - Hung, Ching Wen

AU - Chang, Ching Hong

AU - Chen, Wei Cheng

AU - Chen, Chun Chia

AU - Chen, Huey Ing

AU - Tsai, Yu Ting

AU - Tsai, Jung Hui

AU - Liu, Wen Chau

N1 - Funding Information: Part of this work was supported by the Ministry of Science and Technology of the Republic of China under Contract No. MOST 103-2221-E-006-244-MY3 and the Advanced Optoelectronic. Technology Center , AOTC. Publisher Copyright: © 2016 Elsevier Ltd

PY - 2016/10/1

Y1 - 2016/10/1

N2 - Based on an electrophoretic deposition (EPD)-gate approach, a Pt/AlGaN/GaN heterostructure field-effect transistor (HFET) is fabricated and investigated at higher temperatures. The Pt/AlGaN interface with nearly oxide-free is verified by an Auger Electron Spectroscopy (AES) depth profile for the studied EPD-HFET. This result substantially enhances device performance at room temperature (300 K). Experimentally, the studied EPD-HFET exhibits a high turn-on voltage, a well suppression on gate leakage, a superior maximum drain saturation current, and an excellent extrinsic transconductance. Moreover, the microwave performance of an EPD-HFET is demonstrated at room temperature. Consequentially, this EPD-gate approach gives a promise for high-performance electronic applications.

AB - Based on an electrophoretic deposition (EPD)-gate approach, a Pt/AlGaN/GaN heterostructure field-effect transistor (HFET) is fabricated and investigated at higher temperatures. The Pt/AlGaN interface with nearly oxide-free is verified by an Auger Electron Spectroscopy (AES) depth profile for the studied EPD-HFET. This result substantially enhances device performance at room temperature (300 K). Experimentally, the studied EPD-HFET exhibits a high turn-on voltage, a well suppression on gate leakage, a superior maximum drain saturation current, and an excellent extrinsic transconductance. Moreover, the microwave performance of an EPD-HFET is demonstrated at room temperature. Consequentially, this EPD-gate approach gives a promise for high-performance electronic applications.

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SN - 0038-1101

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EP - 9

JO - Solid-State Electronics

JF - Solid-State Electronics

ER -

A Pt/AlGaN/GaN heterostructure field-effect transistor (HFET) prepared by an electrophoretic deposition (EPD)-gate approach

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