A Pt/AlGaN/GaN heterostructure field-effect transistor (HFET) prepared by an electrophoretic deposition (EPD)-gate approach

Ching Wen Hung, Ching Hong Chang, Wei Cheng Chen, Chun Chia Chen, Huey Ing Chen, Yu Ting Tsai, Jung Hui Tsai, Wen Chau Liu

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Abstract

Based on an electrophoretic deposition (EPD)-gate approach, a Pt/AlGaN/GaN heterostructure field-effect transistor (HFET) is fabricated and investigated at higher temperatures. The Pt/AlGaN interface with nearly oxide-free is verified by an Auger Electron Spectroscopy (AES) depth profile for the studied EPD-HFET. This result substantially enhances device performance at room temperature (300 K). Experimentally, the studied EPD-HFET exhibits a high turn-on voltage, a well suppression on gate leakage, a superior maximum drain saturation current, and an excellent extrinsic transconductance. Moreover, the microwave performance of an EPD-HFET is demonstrated at room temperature. Consequentially, this EPD-gate approach gives a promise for high-performance electronic applications.

Original languageEnglish
Pages (from-to)5-9
Number of pages5
JournalSolid-State Electronics
Volume124
DOIs
Publication statusPublished - 2016 Oct 1

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All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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