A Pt/GaN Schottky diode-type hydrogen sensor with a thin SiO 2-passivated metal/semiconductor junction

Tsung Han Tsai, Huey-Ing Chen, Kun Wei Lin, Ching Wen Hung, Tzu Pin Chen, Li Yang Chen, Kuei Yi Chu, Wen-Chau Liu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

The hydrogen sensing and response characteristics of and Pt/GaN Schottky diodes with thin SiO2-passivated metal/semiconductor junction under different-concentration hydrogen gases are studied over a wide temperature range in an air atmosphere. Experimentally, the studied device exhibits hydrogen sensing performance, including SF of 14685 and SR of 44636 (in 9970 ppm H 2/air), ΔφB of 231.6 meV (in 9970 ppm H2/air), temperature range (300 - 850 K) and voltage-operating sweep under forward and reverse bias conditions. According to the steady-state analysis on adsorption equilibrium, the studied device further shows the excellent performance for high temperature detection and improved activity of hydrogen adsorption reaction.

Original languageEnglish
Title of host publicationIWJT-2008 - Extended Abstracts 2008 International Workshop on Junction Technology
Pages164-167
Number of pages4
DOIs
Publication statusPublished - 2008 Sep 8
EventIWJT-2008 - International Workshop on Junction Technology - Shanghai, China
Duration: 2008 May 152008 May 16

Publication series

NameIWJT-2008 - Extended Abstracts 2008 International Workshop on Junction Technology

Other

OtherIWJT-2008 - International Workshop on Junction Technology
CountryChina
CityShanghai
Period08-05-1508-05-16

All Science Journal Classification (ASJC) codes

  • Hardware and Architecture
  • Electrical and Electronic Engineering

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