TY - GEN
T1 - A Pt/GaN Schottky diode-type hydrogen sensor with a thin SiO 2-passivated metal/semiconductor junction
AU - Tsai, Tsung Han
AU - Chen, Huey-Ing
AU - Lin, Kun Wei
AU - Hung, Ching Wen
AU - Chen, Tzu Pin
AU - Chen, Li Yang
AU - Chu, Kuei Yi
AU - Liu, Wen-Chau
PY - 2008/9/8
Y1 - 2008/9/8
N2 - The hydrogen sensing and response characteristics of and Pt/GaN Schottky diodes with thin SiO2-passivated metal/semiconductor junction under different-concentration hydrogen gases are studied over a wide temperature range in an air atmosphere. Experimentally, the studied device exhibits hydrogen sensing performance, including SF of 14685 and SR of 44636 (in 9970 ppm H 2/air), ΔφB of 231.6 meV (in 9970 ppm H2/air), temperature range (300 - 850 K) and voltage-operating sweep under forward and reverse bias conditions. According to the steady-state analysis on adsorption equilibrium, the studied device further shows the excellent performance for high temperature detection and improved activity of hydrogen adsorption reaction.
AB - The hydrogen sensing and response characteristics of and Pt/GaN Schottky diodes with thin SiO2-passivated metal/semiconductor junction under different-concentration hydrogen gases are studied over a wide temperature range in an air atmosphere. Experimentally, the studied device exhibits hydrogen sensing performance, including SF of 14685 and SR of 44636 (in 9970 ppm H 2/air), ΔφB of 231.6 meV (in 9970 ppm H2/air), temperature range (300 - 850 K) and voltage-operating sweep under forward and reverse bias conditions. According to the steady-state analysis on adsorption equilibrium, the studied device further shows the excellent performance for high temperature detection and improved activity of hydrogen adsorption reaction.
UR - http://www.scopus.com/inward/record.url?scp=50849097053&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=50849097053&partnerID=8YFLogxK
U2 - 10.1109/IWJT.2008.4540041
DO - 10.1109/IWJT.2008.4540041
M3 - Conference contribution
AN - SCOPUS:50849097053
SN - 9781424417384
T3 - IWJT-2008 - Extended Abstracts 2008 International Workshop on Junction Technology
SP - 164
EP - 167
BT - IWJT-2008 - Extended Abstracts 2008 International Workshop on Junction Technology
T2 - IWJT-2008 - International Workshop on Junction Technology
Y2 - 15 May 2008 through 16 May 2008
ER -