Abstract
We report a IrO2 -HfAlO-AlN- SiO2 -Si MONOS device that displays excellent characteristics in terms of speed (100 μs at ±13 V for program/erase) and memory window (3.7 V) at 85°C operation. This device also shows good 10-year extrapolated data retention with a large 1.9 V window at 85°C. The achieved performance compares well with the best reported memory device data.
Original language | English |
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Article number | 049608JES |
Pages (from-to) | G738-G741 |
Journal | Journal of the Electrochemical Society |
Volume | 153 |
Issue number | 8 |
DOIs | |
Publication status | Published - 2006 Aug |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Renewable Energy, Sustainability and the Environment
- Surfaces, Coatings and Films
- Electrochemistry
- Materials Chemistry