We report a IrO2 -HfAlO-AlN- SiO2 -Si MONOS device that displays excellent characteristics in terms of speed (100 μs at ±13 V for program/erase) and memory window (3.7 V) at 85°C operation. This device also shows good 10-year extrapolated data retention with a large 1.9 V window at 85°C. The achieved performance compares well with the best reported memory device data.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Renewable Energy, Sustainability and the Environment
- Surfaces, Coatings and Films
- Materials Chemistry