A quantum trap MONOS memory device using AlN

C. H. Lai, C. H. Wu, Albert Chin, S. J. Wang, S. P. McAlister

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)


We report a IrO2 -HfAlO-AlN- SiO2 -Si MONOS device that displays excellent characteristics in terms of speed (100 μs at ±13 V for program/erase) and memory window (3.7 V) at 85°C operation. This device also shows good 10-year extrapolated data retention with a large 1.9 V window at 85°C. The achieved performance compares well with the best reported memory device data.

Original languageEnglish
Article number049608JES
Pages (from-to)G738-G741
JournalJournal of the Electrochemical Society
Issue number8
Publication statusPublished - 2006 Aug

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

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