A quantum trap MONOS memory device using AlN

C. H. Lai; C. H. Wu; Albert Chin; S. J. Wang; S. P. McAlister

doi:10.1149/1.2208742

A quantum trap MONOS memory device using AlN

C. H. Lai
, C. H. Wu
, Albert Chin
, S. J. Wang
, S. P. McAlister

Institute of Microelectronics

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

We report a IrO2 -HfAlO-AlN- SiO2 -Si MONOS device that displays excellent characteristics in terms of speed (100 μs at ±13 V for program/erase) and memory window (3.7 V) at 85°C operation. This device also shows good 10-year extrapolated data retention with a large 1.9 V window at 85°C. The achieved performance compares well with the best reported memory device data.

Original language	English
Article number	049608JES
Pages (from-to)	G738-G741
Journal	Journal of the Electrochemical Society
Volume	153
Issue number	8
DOIs	https://doi.org/10.1149/1.2208742
Publication status	Published - 2006 Aug

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Renewable Energy, Sustainability and the Environment
Surfaces, Coatings and Films
Electrochemistry
Materials Chemistry

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10.1149/1.2208742

Cite this

@article{7e76d556d8dd4afbb77f20d870623538,

title = "A quantum trap MONOS memory device using AlN",

abstract = "We report a IrO2 -HfAlO-AlN- SiO2 -Si MONOS device that displays excellent characteristics in terms of speed (100 μs at ±13 V for program/erase) and memory window (3.7 V) at 85°C operation. This device also shows good 10-year extrapolated data retention with a large 1.9 V window at 85°C. The achieved performance compares well with the best reported memory device data.",

author = "Lai, \{C. H.\} and Wu, \{C. H.\} and Albert Chin and Wang, \{S. J.\} and McAlister, \{S. P.\}",

year = "2006",

month = aug,

doi = "10.1149/1.2208742",

language = "English",

volume = "153",

pages = "G738--G741",

journal = "Journal of the Electrochemical Society",

issn = "0013-4651",

publisher = "Institute of Physics",

number = "8",

}

TY - JOUR

T1 - A quantum trap MONOS memory device using AlN

AU - Lai, C. H.

AU - Wu, C. H.

AU - Chin, Albert

AU - Wang, S. J.

AU - McAlister, S. P.

PY - 2006/8

Y1 - 2006/8

N2 - We report a IrO2 -HfAlO-AlN- SiO2 -Si MONOS device that displays excellent characteristics in terms of speed (100 μs at ±13 V for program/erase) and memory window (3.7 V) at 85°C operation. This device also shows good 10-year extrapolated data retention with a large 1.9 V window at 85°C. The achieved performance compares well with the best reported memory device data.

AB - We report a IrO2 -HfAlO-AlN- SiO2 -Si MONOS device that displays excellent characteristics in terms of speed (100 μs at ±13 V for program/erase) and memory window (3.7 V) at 85°C operation. This device also shows good 10-year extrapolated data retention with a large 1.9 V window at 85°C. The achieved performance compares well with the best reported memory device data.

UR - https://www.scopus.com/pages/publications/33745496591

UR - https://www.scopus.com/pages/publications/33745496591#tab=citedBy

U2 - 10.1149/1.2208742

DO - 10.1149/1.2208742

M3 - Article

AN - SCOPUS:33745496591

SN - 0013-4651

VL - 153

SP - G738-G741

JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

IS - 8

M1 - 049608JES

ER -

A quantum trap MONOS memory device using AlN

Abstract

All Science Journal Classification (ASJC) codes

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