TY - JOUR
T1 - A quantum well δ-doped GaAs FET fabricated by low-pressure metal organic chemical vapor deposition
AU - Hsu, W. C.
AU - Lin, W.
AU - Wang, C.
N1 - Funding Information:
Acknowledgement--This work was supported in part by the National Science Council of Republic of China under contract no. NSC 78-0417-E006-07.
Copyright:
Copyright 2014 Elsevier B.V., All rights reserved.
PY - 1991/6
Y1 - 1991/6
N2 - A quantum well δ-doped n-type GaAs layer with Ga source open has been grown successfully by the low-pressure metal organic chemical vapor deposition (LP-MOCVD). The measured capacitance-voltage profile shows that a sheet-doping concentration up to 5 × 1012 cm-2 for the δ-doped GaAs layer can be easily achieved. The full-width at half-maximum (FWHM) is quite narrow. From the Hall measurement, the electron mobility increases inversely proportional to the δ-doping concentration. An enhanced mobiity can be obtained more than 2300 and 4300 cm2/Vs with doping concentration of 5.0 × 1018 cm-3 at 300 and 77 K, respectively. Based on this technique, a quantum well δ-doped GaAs FET has been fabricated and demonstrated. With a gate geometry of 5 × 250 μm2 and doping concentration of 5.9 × 1018 cm-3, the estimated transconductance of the δ-doped FET is 64 mS/mm. Since there is an undoped GaAs layer grown on the top of the δ-doped sheet, the breakdown voltage can be increased significantly (> 17 V). Furthermore, the saturation current density can be obtained higher than 110 mA/mm.
AB - A quantum well δ-doped n-type GaAs layer with Ga source open has been grown successfully by the low-pressure metal organic chemical vapor deposition (LP-MOCVD). The measured capacitance-voltage profile shows that a sheet-doping concentration up to 5 × 1012 cm-2 for the δ-doped GaAs layer can be easily achieved. The full-width at half-maximum (FWHM) is quite narrow. From the Hall measurement, the electron mobility increases inversely proportional to the δ-doping concentration. An enhanced mobiity can be obtained more than 2300 and 4300 cm2/Vs with doping concentration of 5.0 × 1018 cm-3 at 300 and 77 K, respectively. Based on this technique, a quantum well δ-doped GaAs FET has been fabricated and demonstrated. With a gate geometry of 5 × 250 μm2 and doping concentration of 5.9 × 1018 cm-3, the estimated transconductance of the δ-doped FET is 64 mS/mm. Since there is an undoped GaAs layer grown on the top of the δ-doped sheet, the breakdown voltage can be increased significantly (> 17 V). Furthermore, the saturation current density can be obtained higher than 110 mA/mm.
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U2 - 10.1016/0038-1101(91)90139-P
DO - 10.1016/0038-1101(91)90139-P
M3 - Article
AN - SCOPUS:0026172886
SN - 0038-1101
VL - 34
SP - 649
EP - 653
JO - Solid State Electronics
JF - Solid State Electronics
IS - 6
ER -