TY - JOUR
T1 - A Quasi-3-D Scaling Length Model for Trapezoidal FinFET and Its Application to Subthreshold Behavior Analysis
AU - Gao, Hong Wun
AU - Wang, Yeong Her
AU - Chiang, Te Kuang
N1 - Funding Information:
This work was supported in part by the Ministry of Science and Technology (MOST) under Contract MOST 103-2221-E-390 -025.
Publisher Copyright:
© 2017 IEEE.
PY - 2017/3
Y1 - 2017/3
N2 - Based on the equivalent channel width and equivalent number of gates, a quasi-3-D scaling length model for the trapezoidal FinFET (TzFinFET) is developed. By accounting for the coupling effects between equivalent double-gate FET and single-gate FET, the scaling length of TzFinFET can be accurately predicted. Besides Fin height, top Fin width, and gate oxide, the scaling length is also sensitive to the inclination angle induced by the process technology. By applying this derived scaling length to the TzFinFET, the subthreshold behavior model including threshold voltage and subthreshold swing can be achieved. Both threshold voltage roll-off and subthreshold swing roll-up can be well controlled by the scaling factor in accordance with the scaling theory. According to the scaling factor, the acceptable minimum channel length that allows the maximum subthreshold degradation can be uniquely determined. The variability of subthreshold characteristics with the process parameter is also taken into account in this paper.
AB - Based on the equivalent channel width and equivalent number of gates, a quasi-3-D scaling length model for the trapezoidal FinFET (TzFinFET) is developed. By accounting for the coupling effects between equivalent double-gate FET and single-gate FET, the scaling length of TzFinFET can be accurately predicted. Besides Fin height, top Fin width, and gate oxide, the scaling length is also sensitive to the inclination angle induced by the process technology. By applying this derived scaling length to the TzFinFET, the subthreshold behavior model including threshold voltage and subthreshold swing can be achieved. Both threshold voltage roll-off and subthreshold swing roll-up can be well controlled by the scaling factor in accordance with the scaling theory. According to the scaling factor, the acceptable minimum channel length that allows the maximum subthreshold degradation can be uniquely determined. The variability of subthreshold characteristics with the process parameter is also taken into account in this paper.
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U2 - 10.1109/TNANO.2017.2662018
DO - 10.1109/TNANO.2017.2662018
M3 - Article
AN - SCOPUS:85015661763
VL - 16
SP - 281
EP - 289
JO - IEEE Transactions on Nanotechnology
JF - IEEE Transactions on Nanotechnology
SN - 1536-125X
IS - 2
M1 - 7837720
ER -