TY - GEN
T1 - A Reliable Near-Threshold Voltage SRAM-Based PUF Utilizing Weight Detection Technique
AU - Chiou, Lih Yih
AU - Huang, Jing Yu
AU - Li, Chi Kuan
AU - Tsai, Chen Chung
N1 - Funding Information:
ACKNOWLEDGMENT The authors would like to thank the Taiwan Ministry of Science and Technology for research grant (MOST 108-2218-E-006-012 and 109-2218-E-006-026) and Taiwan Semiconductor Research Institute (TSRI) for their supports in grants and facilities for IC design, respectively.
Publisher Copyright:
© 2021 IEEE.
PY - 2021/4/19
Y1 - 2021/4/19
N2 - With the continuous advancement of technology, security issues have become increasingly important. In the applications of Internet of Things (IoT), millions of IoT devices are designed to collect data that are sensitive or private. It is crucial to secure such devices. Therefore, every vulnerable device needs to be protected during either communication or operation. Physical unclonable function (PUF), which utilizes random variation during the chip manufacturing process, can realize the concept of chip fingerprint. A PUF not only enhances security but also provides a lightweight choice different from the traditional mechanism that requires a huge amount of storage. In this paper, a reliable near-threshold voltage SRAM-based PUF is designed and presented. The proposed near-threshold design not only achieves 98.055% reliability and 49.99% uniqueness but also consumes lower energy when compared with other works.
AB - With the continuous advancement of technology, security issues have become increasingly important. In the applications of Internet of Things (IoT), millions of IoT devices are designed to collect data that are sensitive or private. It is crucial to secure such devices. Therefore, every vulnerable device needs to be protected during either communication or operation. Physical unclonable function (PUF), which utilizes random variation during the chip manufacturing process, can realize the concept of chip fingerprint. A PUF not only enhances security but also provides a lightweight choice different from the traditional mechanism that requires a huge amount of storage. In this paper, a reliable near-threshold voltage SRAM-based PUF is designed and presented. The proposed near-threshold design not only achieves 98.055% reliability and 49.99% uniqueness but also consumes lower energy when compared with other works.
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U2 - 10.1109/VLSI-DAT52063.2021.9427315
DO - 10.1109/VLSI-DAT52063.2021.9427315
M3 - Conference contribution
AN - SCOPUS:85106623950
T3 - 2021 International Symposium on VLSI Design, Automation and Test, VLSI-DAT 2021 - Proceedings
BT - 2021 International Symposium on VLSI Design, Automation and Test, VLSI-DAT 2021 - Proceedings
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2021 International Symposium on VLSI Design, Automation and Test, VLSI-DAT 2021
Y2 - 19 April 2021 through 22 April 2021
ER -